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APT27Z . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT27Z
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.8 W
   Tensión colector-base (Vcb): 700 V
   Tensión colector-emisor (Vce): 450 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 0.8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 6
   Paquete / Cubierta: TO92
     - Selección de transistores por parámetros

 

APT27Z Datasheet (PDF)

 ..1. Size:313K  diodes
apt27z.pdf pdf_icon

APT27Z

A Product Line ofDiodes IncorporatedGreenAPT27450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data BVCEO > 450V Case: TO92 BVCES > 700V Case Material: Molded Plastic, "Green" Molding Compound; UL BVEBO > 9V Flammability Classification Rating 94V-0 IC = 0.8A high Continuous Collector Current Terminals: Matte Tin Finish; Solderable per MIL-S

 9.1. Size:249K  microsemi
apt27ga90bd15.pdf pdf_icon

APT27Z

APT27GA90BD15 900V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT27GA90BD15gate charge and a greatly reduced ratio of Cres/Cies provide excellent

 9.2. Size:258K  microsemi
apt27ga90sd15.pdf pdf_icon

APT27Z

APT27GA90BD15 APT27GA90SD15 900V High Speed PT IGBT(B)POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved D3PAKthrough leading technology silicon design and lifetime control processes. A reduced Eoff - (S)CVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low G Egate charge and a greatly reduced ratio of C

 9.3. Size:118K  microsemi
apt27ga90k.pdf pdf_icon

APT27Z

APT27GA90K 900V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved TO-220through leading technology silicon design and lifetime control processes. A reduced Eoff - APT27GA90KVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excelle

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N6188 | BTN3501E3 | 2SC2427 | HPA72R-4 | 2N6208 | KTC1026 | 2N2109

 

 
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