MJE4343G datasheet, аналоги, основные параметры

Наименование производителя: MJE4343G  📄📄 

Маркировка: MJE4343

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 125 W

Макcимально допустимое напряжение коллектор-база (Ucb): 160 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V

Макcимальный постоянный ток коллектора (Ic): 16 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 1 MHz

Ёмкость коллекторного перехода (Cc): 800 pf

Статический коэффициент передачи тока (hFE): 8

Корпус транзистора: SOT93 TO247

  📄📄 Копировать 

 Аналоги (замена) для MJE4343G

- подборⓘ биполярного транзистора по параметрам

 

MJE4343G даташит

 ..1. Size:137K  onsemi
 mje4343g.pdf pdf_icon

MJE4343G

MJE4343 (NPN), MJE4353 (PNP) High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. http //onsemi.com Features 16 AMPS High Collector-Emitter Sustaining Voltage - NPN PNP POWER TRANSISTORS VCEO(sus) = 160 Vdc - MJE4343 MJE4353 COMPLEMENTARY High DC Current Gain - @ IC = 8.0 Adc h

 7.1. Size:246K  onsemi
 mje4343 mje4353.pdf pdf_icon

MJE4343G

MJE4343 (NPN), MJE4353 (PNP) High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. http //onsemi.com Features 16 AMPS High Collector-Emitter Sustaining Voltage - NPN PNP POWER TRANSISTORS VCEO(sus) = 160 Vdc - MJE4343 MJE4353 COMPLEMENTARY High DC Current Gain - @ IC = 8.0 Adc h

 7.2. Size:245K  inchange semiconductor
 mje4343.pdf pdf_icon

MJE4343G

isc Silicon NPN Power Transistor MJE4343 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 160V(Min) CEO(SUS) DC current gain - h = 15 (Min) @I = 8 A FE C h = 8 (Min) @I = 16A FE C Complement to Type MJE4353 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For use in high power audio amplifier and switching regula

 7.3. Size:220K  inchange semiconductor
 mje4340 mje4341 mje4342 mje4343.pdf pdf_icon

MJE4343G

isc Silicon NPN Power Transistors MJE4340/4341/4342/4343 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min)- MJE4340 CEO(SUS) = 120V(Min)- MJE4341 = 140V(Min)- MJE4342 = 160V(Min)- MJE4343 Low Saturation Voltage Complement to the PNP MJE4350/4351/4352/4353 APPLICATIONS Designed for use in high power audio amplifier applications and high voltage switching regul

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: MJE2955A, MJE2955TG, MJE3055A, MJE3055TG, MJE340G, MJE3439G, MJE344G, MJE371G, 2SC5198, MJE5730G, MJE5731AG, MJE5731G, MJE5742G, MJE5850G, MJE5851G, MJE5852G, MJE6040T