Справочник транзисторов. MJE4343G

 

Биполярный транзистор MJE4343G Даташит. Аналоги


   Наименование производителя: MJE4343G
   Маркировка: MJE4343
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 125 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 16 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 1 MHz
   Ёмкость коллекторного перехода (Cc): 800 pf
   Статический коэффициент передачи тока (hfe): 8
   Корпус транзистора: SOT93 TO247
 

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MJE4343G Datasheet (PDF)

 ..1. Size:137K  onsemi
mje4343g.pdfpdf_icon

MJE4343G

MJE4343 (NPN),MJE4353 (PNP)High-Voltage - High PowerTransistors. . . designed for use in high power audio amplifier applications andhigh voltage switching regulator circuits.http://onsemi.comFeatures16 AMPS High Collector-Emitter Sustaining Voltage -NPN PNP POWER TRANSISTORSVCEO(sus) = 160 Vdc - MJE4343 MJE4353COMPLEMENTARY High DC Current Gain - @ IC = 8.0 Adc h

 7.1. Size:246K  onsemi
mje4343 mje4353.pdfpdf_icon

MJE4343G

MJE4343 (NPN),MJE4353 (PNP)High-Voltage - High PowerTransistors. . . designed for use in high power audio amplifier applications andhigh voltage switching regulator circuits.http://onsemi.comFeatures16 AMPS High Collector-Emitter Sustaining Voltage -NPN PNP POWER TRANSISTORSVCEO(sus) = 160 Vdc - MJE4343 MJE4353COMPLEMENTARY High DC Current Gain - @ IC = 8.0 Adc h

 7.2. Size:245K  inchange semiconductor
mje4343.pdfpdf_icon

MJE4343G

isc Silicon NPN Power Transistor MJE4343DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 160V(Min)CEO(SUS)DC current gain -: h = 15 (Min) @I = 8 AFE C: h = 8 (Min) @I = 16AFE CComplement to Type MJE4353Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor use in high power audio amplifier andswitching regula

 7.3. Size:220K  inchange semiconductor
mje4340 mje4341 mje4342 mje4343.pdfpdf_icon

MJE4343G

isc Silicon NPN Power Transistors MJE4340/4341/4342/4343DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)- MJE4340CEO(SUS)= 120V(Min)- MJE4341= 140V(Min)- MJE4342= 160V(Min)- MJE4343Low Saturation VoltageComplement to the PNP MJE4350/4351/4352/4353APPLICATIONSDesigned for use in high power audio amplifier applicationsand high voltage switching regul

Другие транзисторы... MJE2955A , MJE2955TG , MJE3055A , MJE3055TG , MJE340G , MJE3439G , MJE344G , MJE371G , 2SC2383Y , MJE5730G , MJE5731AG , MJE5731G , MJE5742G , MJE5850G , MJE5851G , MJE5852G , MJE6040T .

History: BC135A | SXW13009 | NB013FT | KSE3055T | NA32YY | 9018 | AT00570

 

 
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