MJE4343G - аналоги и даташиты биполярного транзистора

 

MJE4343G - Даташиты. Аналоги. Основные параметры


   Наименование производителя: MJE4343G
   Маркировка: MJE4343
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 125 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 16 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 1 MHz
   Ёмкость коллекторного перехода (Cc): 800 pf
   Статический коэффициент передачи тока (hfe): 8
   Корпус транзистора: SOT93 TO247

 Аналоги (замена) для MJE4343G

 

MJE4343G Datasheet (PDF)

 ..1. Size:137K  onsemi
 mje4343g.pdf pdf_icon

MJE4343G

MJE4343 (NPN), MJE4353 (PNP) High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. http //onsemi.com Features 16 AMPS High Collector-Emitter Sustaining Voltage - NPN PNP POWER TRANSISTORS VCEO(sus) = 160 Vdc - MJE4343 MJE4353 COMPLEMENTARY High DC Current Gain - @ IC = 8.0 Adc h

 7.1. Size:246K  onsemi
 mje4343 mje4353.pdf pdf_icon

MJE4343G

MJE4343 (NPN), MJE4353 (PNP) High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. http //onsemi.com Features 16 AMPS High Collector-Emitter Sustaining Voltage - NPN PNP POWER TRANSISTORS VCEO(sus) = 160 Vdc - MJE4343 MJE4353 COMPLEMENTARY High DC Current Gain - @ IC = 8.0 Adc h

 7.2. Size:245K  inchange semiconductor
 mje4343.pdf pdf_icon

MJE4343G

isc Silicon NPN Power Transistor MJE4343 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 160V(Min) CEO(SUS) DC current gain - h = 15 (Min) @I = 8 A FE C h = 8 (Min) @I = 16A FE C Complement to Type MJE4353 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For use in high power audio amplifier and switching regula

 7.3. Size:220K  inchange semiconductor
 mje4340 mje4341 mje4342 mje4343.pdf pdf_icon

MJE4343G

isc Silicon NPN Power Transistors MJE4340/4341/4342/4343 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min)- MJE4340 CEO(SUS) = 120V(Min)- MJE4341 = 140V(Min)- MJE4342 = 160V(Min)- MJE4343 Low Saturation Voltage Complement to the PNP MJE4350/4351/4352/4353 APPLICATIONS Designed for use in high power audio amplifier applications and high voltage switching regul

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