All Transistors. MJE4343G Datasheet

 

MJE4343G Datasheet, Equivalent, Cross Reference Search


   Type Designator: MJE4343G
   SMD Transistor Code: MJE4343
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 125 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 16 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Collector Capacitance (Cc): 800 pF
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: SOT93 TO247

 MJE4343G Transistor Equivalent Substitute - Cross-Reference Search

   

MJE4343G Datasheet (PDF)

 ..1. Size:137K  onsemi
mje4343g.pdf

MJE4343G
MJE4343G

MJE4343 (NPN),MJE4353 (PNP)High-Voltage - High PowerTransistors. . . designed for use in high power audio amplifier applications andhigh voltage switching regulator circuits.http://onsemi.comFeatures16 AMPS High Collector-Emitter Sustaining Voltage -NPN PNP POWER TRANSISTORSVCEO(sus) = 160 Vdc - MJE4343 MJE4353COMPLEMENTARY High DC Current Gain - @ IC = 8.0 Adc h

 7.1. Size:246K  onsemi
mje4343 mje4353.pdf

MJE4343G
MJE4343G

MJE4343 (NPN),MJE4353 (PNP)High-Voltage - High PowerTransistors. . . designed for use in high power audio amplifier applications andhigh voltage switching regulator circuits.http://onsemi.comFeatures16 AMPS High Collector-Emitter Sustaining Voltage -NPN PNP POWER TRANSISTORSVCEO(sus) = 160 Vdc - MJE4343 MJE4353COMPLEMENTARY High DC Current Gain - @ IC = 8.0 Adc h

 7.2. Size:245K  inchange semiconductor
mje4343.pdf

MJE4343G
MJE4343G

isc Silicon NPN Power Transistor MJE4343DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 160V(Min)CEO(SUS)DC current gain -: h = 15 (Min) @I = 8 AFE C: h = 8 (Min) @I = 16AFE CComplement to Type MJE4353Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor use in high power audio amplifier andswitching regula

 7.3. Size:220K  inchange semiconductor
mje4340 mje4341 mje4342 mje4343.pdf

MJE4343G
MJE4343G

isc Silicon NPN Power Transistors MJE4340/4341/4342/4343DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)- MJE4340CEO(SUS)= 120V(Min)- MJE4341= 140V(Min)- MJE4342= 160V(Min)- MJE4343Low Saturation VoltageComplement to the PNP MJE4350/4351/4352/4353APPLICATIONSDesigned for use in high power audio amplifier applicationsand high voltage switching regul

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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