MJE4343G Todos los transistores

 

MJE4343G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJE4343G
   Código: MJE4343
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 125 W
   Tensión colector-base (Vcb): 160 V
   Tensión colector-emisor (Vce): 160 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 16 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1 MHz
   Capacitancia de salida (Cc): 800 pF
   Ganancia de corriente contínua (hfe): 8
   Paquete / Cubierta: SOT93 TO247
 

 Búsqueda de reemplazo de MJE4343G

   - Selección ⓘ de transistores por parámetros

 

MJE4343G Datasheet (PDF)

 ..1. Size:137K  onsemi
 mje4343g.pdf pdf_icon

MJE4343G

MJE4343 (NPN),MJE4353 (PNP)High-Voltage - High PowerTransistors. . . designed for use in high power audio amplifier applications andhigh voltage switching regulator circuits.http://onsemi.comFeatures16 AMPS High Collector-Emitter Sustaining Voltage -NPN PNP POWER TRANSISTORSVCEO(sus) = 160 Vdc - MJE4343 MJE4353COMPLEMENTARY High DC Current Gain - @ IC = 8.0 Adc h

 7.1. Size:246K  onsemi
 mje4343 mje4353.pdf pdf_icon

MJE4343G

MJE4343 (NPN),MJE4353 (PNP)High-Voltage - High PowerTransistors. . . designed for use in high power audio amplifier applications andhigh voltage switching regulator circuits.http://onsemi.comFeatures16 AMPS High Collector-Emitter Sustaining Voltage -NPN PNP POWER TRANSISTORSVCEO(sus) = 160 Vdc - MJE4343 MJE4353COMPLEMENTARY High DC Current Gain - @ IC = 8.0 Adc h

 7.2. Size:245K  inchange semiconductor
 mje4343.pdf pdf_icon

MJE4343G

isc Silicon NPN Power Transistor MJE4343DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 160V(Min)CEO(SUS)DC current gain -: h = 15 (Min) @I = 8 AFE C: h = 8 (Min) @I = 16AFE CComplement to Type MJE4353Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor use in high power audio amplifier andswitching regula

 7.3. Size:220K  inchange semiconductor
 mje4340 mje4341 mje4342 mje4343.pdf pdf_icon

MJE4343G

isc Silicon NPN Power Transistors MJE4340/4341/4342/4343DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)- MJE4340CEO(SUS)= 120V(Min)- MJE4341= 140V(Min)- MJE4342= 160V(Min)- MJE4343Low Saturation VoltageComplement to the PNP MJE4350/4351/4352/4353APPLICATIONSDesigned for use in high power audio amplifier applicationsand high voltage switching regul

MOSTRAR MÁS

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: 2SC3826 | 2SA663 | KMBT5401 | TK46C | MJE2901 | NB212ZH | MJE243G

 

 
Back to Top

 


 
.