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MJE4343G Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJE4343G
   Código: MJE4343
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 125 W
   Tensión colector-base (Vcb): 160 V
   Tensión colector-emisor (Vce): 160 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 16 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1 MHz
   Capacitancia de salida (Cc): 800 pF
   Ganancia de corriente contínua (hfe): 8
   Paquete / Cubierta: SOT93 TO247
 

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MJE4343G datasheet

 ..1. Size:137K  onsemi
mje4343g.pdf pdf_icon

MJE4343G

MJE4343 (NPN), MJE4353 (PNP) High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. http //onsemi.com Features 16 AMPS High Collector-Emitter Sustaining Voltage - NPN PNP POWER TRANSISTORS VCEO(sus) = 160 Vdc - MJE4343 MJE4353 COMPLEMENTARY High DC Current Gain - @ IC = 8.0 Adc h

 7.1. Size:246K  onsemi
mje4343 mje4353.pdf pdf_icon

MJE4343G

MJE4343 (NPN), MJE4353 (PNP) High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. http //onsemi.com Features 16 AMPS High Collector-Emitter Sustaining Voltage - NPN PNP POWER TRANSISTORS VCEO(sus) = 160 Vdc - MJE4343 MJE4353 COMPLEMENTARY High DC Current Gain - @ IC = 8.0 Adc h

 7.2. Size:245K  inchange semiconductor
mje4343.pdf pdf_icon

MJE4343G

isc Silicon NPN Power Transistor MJE4343 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 160V(Min) CEO(SUS) DC current gain - h = 15 (Min) @I = 8 A FE C h = 8 (Min) @I = 16A FE C Complement to Type MJE4353 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For use in high power audio amplifier and switching regula

 7.3. Size:220K  inchange semiconductor
mje4340 mje4341 mje4342 mje4343.pdf pdf_icon

MJE4343G

isc Silicon NPN Power Transistors MJE4340/4341/4342/4343 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min)- MJE4340 CEO(SUS) = 120V(Min)- MJE4341 = 140V(Min)- MJE4342 = 160V(Min)- MJE4343 Low Saturation Voltage Complement to the PNP MJE4350/4351/4352/4353 APPLICATIONS Designed for use in high power audio amplifier applications and high voltage switching regul

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