MJE4343G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE4343G 📄📄
Código: MJE4343
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125 W
Tensión colector-base (Vcb): 160 V
Tensión colector-emisor (Vce): 160 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 16 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 1 MHz
Capacitancia de salida (Cc): 800 pF
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MJE4343G datasheet
mje4343g.pdf
MJE4343 (NPN), MJE4353 (PNP) High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. http //onsemi.com Features 16 AMPS High Collector-Emitter Sustaining Voltage - NPN PNP POWER TRANSISTORS VCEO(sus) = 160 Vdc - MJE4343 MJE4353 COMPLEMENTARY High DC Current Gain - @ IC = 8.0 Adc h
mje4343 mje4353.pdf
MJE4343 (NPN), MJE4353 (PNP) High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. http //onsemi.com Features 16 AMPS High Collector-Emitter Sustaining Voltage - NPN PNP POWER TRANSISTORS VCEO(sus) = 160 Vdc - MJE4343 MJE4353 COMPLEMENTARY High DC Current Gain - @ IC = 8.0 Adc h
mje4343.pdf
isc Silicon NPN Power Transistor MJE4343 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 160V(Min) CEO(SUS) DC current gain - h = 15 (Min) @I = 8 A FE C h = 8 (Min) @I = 16A FE C Complement to Type MJE4353 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For use in high power audio amplifier and switching regula
mje4340 mje4341 mje4342 mje4343.pdf
isc Silicon NPN Power Transistors MJE4340/4341/4342/4343 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min)- MJE4340 CEO(SUS) = 120V(Min)- MJE4341 = 140V(Min)- MJE4342 = 160V(Min)- MJE4343 Low Saturation Voltage Complement to the PNP MJE4350/4351/4352/4353 APPLICATIONS Designed for use in high power audio amplifier applications and high voltage switching regul
Otros transistores... MJE2955A, MJE2955TG, MJE3055A, MJE3055TG, MJE340G, MJE3439G, MJE344G, MJE371G, 2SD2499, MJE5730G, MJE5731AG, MJE5731G, MJE5742G, MJE5850G, MJE5851G, MJE5852G, MJE6040T
Parámetros del transistor bipolar y su interrelación.
History: CSD882R | UMT4401
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