Справочник транзисторов. 3CD9

 

Биполярный транзистор 3CD9 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 3CD9
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 150 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
   Макcимальный постоянный ток коллектора (Ic): 15 A
   Предельная температура PN-перехода (Tj): 175 °C
   Статический коэффициент передачи тока (hfe): 15
   Корпус транзистора: TO3

 Аналоги (замена) для 3CD9

 

 

3CD9 Datasheet (PDF)

 ..1. Size:124K  china
3cd9.pdf

3CD9

3CD9 PNP B C D E F G H PCM TC=75 150 W ICM 15 A Tjm 175 Tstg -55~150 VCE=10V Rth 0.7 /W IC=4A V(BR)CBO ICB=10mA 50 80 110 150 200 250 300 V V(BR)CEO ICE=10mA 50 80 110 150 200 250 300 V V(BR)EBO IEB=15mA 4.0 V ICBO VCB=

 0.1. Size:219K  blue-rocket-elect
3cd910.pdf

3CD9 3CD9

3CD910 PNP /SILICON PNP TRANSISTOR : Purpose: Audio frequency amplifier, low voltage regulator. :, h FEFeatures: Low saturation voltage, excellent h linearity and high h . FE FE/Absolute maximum ratings(Ta=25) Symbol R

 0.2. Size:208K  lzg
3cd940.pdf

3CD9 3CD9

2SB940(3CD940) PNP /SILICON PNP TRANSISTOR :,/Purpose: Power amplifier, TV vertical deflection output. :/Features: High V , large P . CEO C/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -200 V CBO V -150 V C

 0.3. Size:182K  inchange semiconductor
3cd9d.pdf

3CD9 3CD9

INCHANGE Semiconductorisc Silicon PNP Power Transistors 3CD9DDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

 0.4. Size:182K  inchange semiconductor
3cd9b.pdf

3CD9 3CD9

INCHANGE Semiconductorisc Silicon PNP Power Transistors 3CD9BDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

 0.5. Size:182K  inchange semiconductor
3cd9a.pdf

3CD9 3CD9

INCHANGE Semiconductorisc Silicon PNP Power Transistors 3CD9ADESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

 0.6. Size:182K  inchange semiconductor
3cd9c.pdf

3CD9 3CD9

INCHANGE Semiconductorisc Silicon PNP Power Transistors 3CD9CDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

 0.7. Size:203K  inchange semiconductor
3cd9f.pdf

3CD9 3CD9

isc Silicon PNP Power Transistors 3CD9FDESCRIPTIONLow Collector Saturation Voltage-: V = -1.5V(Max.)@ I = -7.5ACE(sat) CDC Current Gain-: h =15-120@I = -7.5A,V =-5VFE C CE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier and switchingapplicationsA

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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