3CD9 Specs and Replacement
Type Designator: 3CD9
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO3
3CD9 Substitution
- BJT ⓘ Cross-Reference Search
3CD9 datasheet
3CD9 PNP B C D E F G H PCM TC=75 150 W ICM 15 A Tjm 175 Tstg -55 150 VCE=10V Rth 0.7 /W IC=4A V(BR)CBO ICB=10mA 50 80 110 150 200 250 300 V V(BR)CEO ICE=10mA 50 80 110 150 200 250 300 V V(BR)EBO IEB=15mA 4.0 V ICBO VCB=... See More ⇒
3CD910 PNP /SILICON PNP TRANSISTOR Purpose Audio frequency amplifier, low voltage regulator. , h FE Features Low saturation voltage, excellent h linearity and high h . FE FE /Absolute maximum ratings(Ta=25 ) Symbol R... See More ⇒
2SB940(3CD940) PNP /SILICON PNP TRANSISTOR , /Purpose Power amplifier, TV vertical deflection output. /Features High V , large P . CEO C /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -200 V CBO V -150 V C... See More ⇒
INCHANGE Semiconductor isc Silicon PNP Power Transistors 3CD9D DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
Detailed specifications: 3CD6, 3CD6109, 3CD6124, 3CD6125, 3CD6126, 3CD8, 3CD834, 3CD837, 13005, 3CD940, 3CF1, 3CF5, 3CG1, 3CG1013, 3CG1013T, 3CG1015, 3CG1015M
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