3CG6 - описание и поиск аналогов

 ..1. Size:24K  shaanxi
 3cg6.pdf 

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG6 PNP Silicon High Frequency Low Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adj

 0.1. Size:112K  china
 3cg636.pdf 

3CG636 PNP PCM TA=25 830 mW ICM 1500 mA Tjm 150 Tstg -55 150 V(BR)CBO ICB=0.1mA 45 V V(BR)CEO ICE=0.1mA 45 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 0.1 A IEBO VEB=5V 0.1 A VBEsat 1.0 IC=500mA V IB=50mA VCEsat 0.5 VCE=2

 0.2. Size:264K  foshan
 2n6517m 3cg6517m.pdf 

2N6517M(3CG6517M) NPN /SILICON NPN TRANSISTOR /Purpose High voltage application. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 350 V CBO V 350 V CEO V 6.0 V EBO I 500 mA C P 300 mW C T 150 j T -55 150 stg /Electrical characteristics(T

 0.3. Size:263K  lzg
 3cg608.pdf 

2SA608(3CG608) 2SA608K(3CG608K) PNP /SILICON PNP TRANSISTOR Purpose General- purpose AMP, switching applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit 2SA608 -40 V CBO V 2SA608K -55 2SA608 -30 V V CEO 2SA608K -50 V EBO -5.0 V I -100 mA C

 0.4. Size:263K  lzg
 3cg608k.pdf 

2SA608(3CG608) 2SA608K(3CG608K) PNP /SILICON PNP TRANSISTOR Purpose General- purpose AMP, switching applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit 2SA608 -40 V CBO V 2SA608K -55 2SA608 -30 V V CEO 2SA608K -50 V EBO -5.0 V I -100 mA C

 0.5. Size:258K  lzg
 3cg6517.pdf 

2N6517(3CG6517) NPN /SILICON NPN TRANSISTOR /Purpose High voltage application. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 350 V CBO V 350 V CEO V 6.0 V EBO I 500 mA C P 625 mW C T 150 j T -55 150 stg /Electrical characteristics(Ta=

 0.6. Size:242K  lzg
 3cg673a.pdf 

2SA673A(3CG673A) PNP /SILICON PNP TRANSISTOR /Purpose Low frequency power amplifier. 2SC1213(3DG1213)/2SC1213A(3DG1213A) Features Complementary pair with 2SC1213(3DG1213)/2SC1213A(3DG1213A). /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit 3CG673 -35 V CBO V 3C

 0.7. Size:304K  lzg
 3cg624.pdf 

2SB624(3CG624) PNP /SILICON PNP TRANSISTOR Purpose Audio frequency amplifier application . h , 2SD596(3DG596M) FE Features High h , complementary pair with 2SD596(3DG596M). F E /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V -30 V CBO V -25 V CEO

 0.8. Size:204K  lzg
 3cg698.pdf 

2SB698(3CG698) PNP /SILICON PNP TRANSISTOR 1W Purpose 1W AF output, electronic governor, DC-DC converter applications. /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V -25 V CBO V -20 V CEO V -5.0 V EBO I -0.7 A C I -1.5 A CP P 600 mW C

 0.9. Size:242K  lzg
 3cg673.pdf 

2SA673A(3CG673A) PNP /SILICON PNP TRANSISTOR /Purpose Low frequency power amplifier. 2SC1213(3DG1213)/2SC1213A(3DG1213A) Features Complementary pair with 2SC1213(3DG1213)/2SC1213A(3DG1213A). /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit 3CG673 -35 V CBO V 3C

 0.10. Size:30K  shaanxi
 3cg640.pdf 

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG640, 3CG708 PNP Silicon High Frequency Middle Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low powe