3CG6 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG6 PNP Silicon High Frequency Low Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adj

3CG636 PNP PCM TA=25 830 mW ICM 1500 mA Tjm 150 Tstg -55 150 V(BR)CBO ICB=0.1mA 45 V V(BR)CEO ICE=0.1mA 45 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 0.1 A IEBO VEB=5V 0.1 A VBEsat 1.0 IC=500mA V IB=50mA VCEsat 0.5 VCE=2

2N6517M(3CG6517M) NPN /SILICON NPN TRANSISTOR /Purpose High voltage application. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 350 V CBO V 350 V CEO V 6.0 V EBO I 500 mA C P 300 mW C T 150 j T -55 150 stg /Electrical characteristics(T

2SA608(3CG608) 2SA608K(3CG608K) PNP /SILICON PNP TRANSISTOR Purpose General- purpose AMP, switching applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit 2SA608 -40 V CBO V 2SA608K -55 2SA608 -30 V V CEO 2SA608K -50 V EBO -5.0 V I -100 mA C

2SA608(3CG608) 2SA608K(3CG608K) PNP /SILICON PNP TRANSISTOR Purpose General- purpose AMP, switching applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit 2SA608 -40 V CBO V 2SA608K -55 2SA608 -30 V V CEO 2SA608K -50 V EBO -5.0 V I -100 mA C

2N6517(3CG6517) NPN /SILICON NPN TRANSISTOR /Purpose High voltage application. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 350 V CBO V 350 V CEO V 6.0 V EBO I 500 mA C P 625 mW C T 150 j T -55 150 stg /Electrical characteristics(Ta=

2SA673A(3CG673A) PNP /SILICON PNP TRANSISTOR /Purpose Low frequency power amplifier. 2SC1213(3DG1213)/2SC1213A(3DG1213A) Features Complementary pair with 2SC1213(3DG1213)/2SC1213A(3DG1213A). /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit 3CG673 -35 V CBO V 3C

2SB624(3CG624) PNP /SILICON PNP TRANSISTOR Purpose Audio frequency amplifier application . h , 2SD596(3DG596M) FE Features High h , complementary pair with 2SD596(3DG596M). F E /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V -30 V CBO V -25 V CEO

2SB698(3CG698) PNP /SILICON PNP TRANSISTOR 1W Purpose 1W AF output, electronic governor, DC-DC converter applications. /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V -25 V CBO V -20 V CEO V -5.0 V EBO I -0.7 A C I -1.5 A CP P 600 mW C

2SA673A(3CG673A) PNP /SILICON PNP TRANSISTOR /Purpose Low frequency power amplifier. 2SC1213(3DG1213)/2SC1213A(3DG1213A) Features Complementary pair with 2SC1213(3DG1213)/2SC1213A(3DG1213A). /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit 3CG673 -35 V CBO V 3C

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG640, 3CG708 PNP Silicon High Frequency Middle Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low powe