3CG6 Datasheet PDF and Equivalents Search

 ..1. Size:24K  shaanxi

 3cg6.pdf

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG6 PNP Silicon High Frequency Low Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adj... See More ⇒

 0.1. Size:112K  china

 3cg636.pdf

3CG636 PNP PCM TA=25 830 mW ICM 1500 mA Tjm 150 Tstg -55 150 V(BR)CBO ICB=0.1mA 45 V V(BR)CEO ICE=0.1mA 45 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 0.1 A IEBO VEB=5V 0.1 A VBEsat 1.0 IC=500mA V IB=50mA VCEsat 0.5 VCE=2... See More ⇒

 0.2. Size:264K  foshan

 2n6517m 3cg6517m.pdf

2N6517M(3CG6517M) NPN /SILICON NPN TRANSISTOR /Purpose High voltage application. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 350 V CBO V 350 V CEO V 6.0 V EBO I 500 mA C P 300 mW C T 150 j T -55 150 stg /Electrical characteristics(T... See More ⇒

 0.3. Size:263K  lzg

 3cg608.pdf

2SA608(3CG608) 2SA608K(3CG608K) PNP /SILICON PNP TRANSISTOR Purpose General- purpose AMP, switching applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit 2SA608 -40 V CBO V 2SA608K -55 2SA608 -30 V V CEO 2SA608K -50 V EBO -5.0 V I -100 mA C... See More ⇒

 0.4. Size:263K  lzg

 3cg608k.pdf

2SA608(3CG608) 2SA608K(3CG608K) PNP /SILICON PNP TRANSISTOR Purpose General- purpose AMP, switching applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit 2SA608 -40 V CBO V 2SA608K -55 2SA608 -30 V V CEO 2SA608K -50 V EBO -5.0 V I -100 mA C... See More ⇒

 0.5. Size:258K  lzg

 3cg6517.pdf

2N6517(3CG6517) NPN /SILICON NPN TRANSISTOR /Purpose High voltage application. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 350 V CBO V 350 V CEO V 6.0 V EBO I 500 mA C P 625 mW C T 150 j T -55 150 stg /Electrical characteristics(Ta=... See More ⇒

 0.6. Size:242K  lzg

 3cg673a.pdf

2SA673A(3CG673A) PNP /SILICON PNP TRANSISTOR /Purpose Low frequency power amplifier. 2SC1213(3DG1213)/2SC1213A(3DG1213A) Features Complementary pair with 2SC1213(3DG1213)/2SC1213A(3DG1213A). /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit 3CG673 -35 V CBO V 3C... See More ⇒

 0.7. Size:304K  lzg

 3cg624.pdf

2SB624(3CG624) PNP /SILICON PNP TRANSISTOR Purpose Audio frequency amplifier application . h , 2SD596(3DG596M) FE Features High h , complementary pair with 2SD596(3DG596M). F E /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V -30 V CBO V -25 V CEO ... See More ⇒

 0.8. Size:204K  lzg

 3cg698.pdf

2SB698(3CG698) PNP /SILICON PNP TRANSISTOR 1W Purpose 1W AF output, electronic governor, DC-DC converter applications. /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V -25 V CBO V -20 V CEO V -5.0 V EBO I -0.7 A C I -1.5 A CP P 600 mW C ... See More ⇒

 0.9. Size:242K  lzg

 3cg673.pdf

2SA673A(3CG673A) PNP /SILICON PNP TRANSISTOR /Purpose Low frequency power amplifier. 2SC1213(3DG1213)/2SC1213A(3DG1213A) Features Complementary pair with 2SC1213(3DG1213)/2SC1213A(3DG1213A). /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit 3CG673 -35 V CBO V 3C... See More ⇒

 0.10. Size:30K  shaanxi

 3cg640.pdf

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG640, 3CG708 PNP Silicon High Frequency Middle Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low powe... See More ⇒