3CG6 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3CG6
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.06 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO18
3CG6 Transistor Equivalent Substitute - Cross-Reference Search
3CG6 Datasheet (PDF)
3cg6.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG6PNP Silicon High Frequency Low Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adj
3cg636.pdf
3CG636 PNP PCM TA=25 830 mW ICM 1500 mA Tjm 150 Tstg -55~150 V(BR)CBO ICB=0.1mA 45 V V(BR)CEO ICE=0.1mA 45 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 0.1 A IEBO VEB=5V 0.1 A VBEsat 1.0 IC=500mA V IB=50mA VCEsat 0.5 VCE=2
2n6517m 3cg6517m.pdf
2N6517M(3CG6517M) NPN /SILICON NPN TRANSISTOR :/Purpose: High voltage application. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 350 V CBO V 350 V CEO V 6.0 V EBO I 500 mA C P 300 mW CT 150 j T -55150 stg /Electrical characteristics(T
3cg608.pdf
2SA608(3CG608) 2SA608K(3CG608K) PNP /SILICON PNP TRANSISTOR : Purpose: General- purpose AMP, switching applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit 2SA608 -40 VCBO V 2SA608K -55 2SA608 -30 V V CEO 2SA608K -50 VEBO -5.0 V I -100 mA C
3cg608k.pdf
2SA608(3CG608) 2SA608K(3CG608K) PNP /SILICON PNP TRANSISTOR : Purpose: General- purpose AMP, switching applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit 2SA608 -40 VCBO V 2SA608K -55 2SA608 -30 V V CEO 2SA608K -50 VEBO -5.0 V I -100 mA C
3cg6517.pdf
2N6517(3CG6517) NPN /SILICON NPN TRANSISTOR :/Purpose: High voltage application. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 350 V CBO V 350 V CEO V 6.0 V EBO I 500 mA C P 625 mW CT 150 j T -55150 stg /Electrical characteristics(Ta=
3cg673a.pdf
2SA673A(3CG673A) PNP /SILICON PNP TRANSISTOR :/Purpose: Low frequency power amplifier. : 2SC1213(3DG1213)/2SC1213A(3DG1213A) Features: Complementary pair with 2SC1213(3DG1213)/2SC1213A(3DG1213A). /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit 3CG673 -35 VCBO V 3C
3cg624.pdf
2SB624(3CG624) PNP /SILICON PNP TRANSISTOR : Purpose: Audio frequency amplifier application . : h , 2SD596(3DG596M) FEFeatures: High h , complementary pair with 2SD596(3DG596M). FE/Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V -30 V CBO V -25 V CEO
3cg698.pdf
2SB698(3CG698) PNP /SILICON PNP TRANSISTOR :1W Purpose: 1W AF output, electronic governor, DC-DC converter applications. /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V -25 V CBO V -20 V CEO V -5.0 V EBO I -0.7 A C I -1.5 A CPP 600 mW C
3cg673.pdf
2SA673A(3CG673A) PNP /SILICON PNP TRANSISTOR :/Purpose: Low frequency power amplifier. : 2SC1213(3DG1213)/2SC1213A(3DG1213A) Features: Complementary pair with 2SC1213(3DG1213)/2SC1213A(3DG1213A). /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit 3CG673 -35 VCBO V 3C
3cg640.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG640, 3CG708 PNP Silicon High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low powe
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
