DHS042N85P108A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.5mDS(on) (TYP)the RoHS standard.13 SI = 108AD2 Features Fast switching Low on resistance Low g

NCEP012N85LLNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =400ADS Duniquely optimized to provide the most efficient high frequency R =1.0m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination

SFP055N85C3, SFB052N85C3 N-MOSFET 95V, 4.6m, 120AFeatures Product Summary Extremely low on-resistance RDS(on)VDS95V Excellent QgxRDS(on) product(FOM)RDS(on)4.6m Qualified according to JEDEC criteria ID 120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive Battery management UPS (Uninterrupible Power Supplies)SFP05