2N85 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N85
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 30 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 75 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.4 MHz
Capacitancia de salida (Cc): 60 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: R78
Búsqueda de reemplazo de 2N85
2N85 Datasheet (PDF)
mtp1n100 mtp1n55 mtp1n95 mtp20p06 mtp2955 mtp2n55 mtp2n60 mtp2n85 mtp2p45 mtp2p50 mtp3n100 mtp3n75 mtp3n80 mtp3n95 mtp3p25 mtp4n85.pdf

dhs042n85p.pdf

DHS042N85P108A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.5mDS(on) (TYP)the RoHS standard.13 SI = 108AD2 Features Fast switching Low on resistance Low g
ncep012n85ll.pdf

NCEP012N85LLNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =400ADS Duniquely optimized to provide the most efficient high frequency R =1.0m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination
Otros transistores... 2N845 , 2N846 , 2N846A , 2N846B , 2N847 , 2N848 , 2N849 , 2N84A , 2N4401 , 2N850 , 2N851 , 2N852 , 2N858 , 2N859 , 2N86 , 2N860 , 2N861 .



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