2N85 Todos los transistores

 

2N85 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N85
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 30 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 75 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 0.4 MHz
   Capacitancia de salida (Cc): 60 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: R78
 

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2N85 Datasheet (PDF)

 0.1. Size:56K  motorola
 mtp1n100 mtp1n55 mtp1n95 mtp20p06 mtp2955 mtp2n55 mtp2n60 mtp2n85 mtp2p45 mtp2p50 mtp3n100 mtp3n75 mtp3n80 mtp3n95 mtp3p25 mtp4n85.pdf pdf_icon

2N85

 0.2. Size:95K  njs
 mtm2n85 mtm2n90 mtp2n90.pdf pdf_icon

2N85

 0.3. Size:792K  cn wxdh
 dhs042n85p.pdf pdf_icon

2N85

DHS042N85P108A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.5mDS(on) (TYP)the RoHS standard.13 SI = 108AD2 Features Fast switching Low on resistance Low g

 0.4. Size:467K  ncepower
 ncep012n85ll.pdf pdf_icon

2N85

NCEP012N85LLNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =400ADS Duniquely optimized to provide the most efficient high frequency R =1.0m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination

MOSTRAR MÁS

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: ECG63

 

 
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