All Transistors. 2N85 Datasheet

 

2N85 Datasheet and Replacement


   Type Designator: 2N85
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 75 °C
   Transition Frequency (ft): 0.4 MHz
   Collector Capacitance (Cc): 60 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: R78
 

 2N85 Substitution

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2N85 Datasheet (PDF)

 0.1. Size:56K  motorola
 mtp1n100 mtp1n55 mtp1n95 mtp20p06 mtp2955 mtp2n55 mtp2n60 mtp2n85 mtp2p45 mtp2p50 mtp3n100 mtp3n75 mtp3n80 mtp3n95 mtp3p25 mtp4n85.pdf pdf_icon

2N85

 0.2. Size:95K  njs
 mtm2n85 mtm2n90 mtp2n90.pdf pdf_icon

2N85

 0.3. Size:792K  cn wxdh
 dhs042n85p.pdf pdf_icon

2N85

DHS042N85P108A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.5mDS(on) (TYP)the RoHS standard.13 SI = 108AD2 Features Fast switching Low on resistance Low g

 0.4. Size:467K  ncepower
 ncep012n85ll.pdf pdf_icon

2N85

NCEP012N85LLNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =400ADS Duniquely optimized to provide the most efficient high frequency R =1.0m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination

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Datasheet: 2N845 , 2N846 , 2N846A , 2N846B , 2N847 , 2N848 , 2N849 , 2N84A , 2N4401 , 2N850 , 2N851 , 2N852 , 2N858 , 2N859 , 2N86 , 2N860 , 2N861 .

History: 2N825

Keywords - 2N85 transistor datasheet

 2N85 cross reference
 2N85 equivalent finder
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