2N85 Datasheet. Specs and Replacement
Type Designator: 2N85
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 75 °C
Electrical Characteristics
Transition Frequency (ft): 0.4 MHz
Collector Capacitance (Cc): 60 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: R78
2N85 Substitution
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2N85 datasheet
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DHS042N85P 108A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.5m DS(on) (TYP) the RoHS standard. 1 3 S I = 108A D 2 Features Fast switching Low on resistance Low g... See More ⇒
NCEP012N85LL NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =400A DS D uniquely optimized to provide the most efficient high frequency R =1.0m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power losses are minimized due to an extremely low combination... See More ⇒
Detailed specifications: 2N845, 2N846, 2N846A, 2N846B, 2N847, 2N848, 2N849, 2N84A, 2SB817, 2N850, 2N851, 2N852, 2N858, 2N859, 2N86, 2N860, 2N861
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