3DG160 - описание и поиск аналогов

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG160 NPN Silicon High Reverse Voltage High Frequency Low Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification

2SC1684(BR3DG1684) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features , High hFE, low VCE(sat). / Applications General purpose amplifier. / Equivalent Circuit

3DG162 NPN A B C D E F G H I J PCM 300 mW IC 20 mA Tjm 175 V(BR)CB ICB=0.1mA 6 10 14 18 22 6 10 14 18 22 V 0 0 0 0 0 0 0 0 0 0 V(BR)CE ICE=0.1mA 6 10 14 18 22 6 10 14 18 22 V O 0 0 0 0 0 V(BR)EB 5.0 0 0 0 0 0 V

3DG161(A G) NPN A B C D E F G PCM TA=25 300 mW ICM 20 mA Tjm 175 Tstg -55 150 V(BR)CEO ICE=0.5mA 60 100 140 180 220 260 300 V 0 V(BR)EBO IEB=0.1mA 5.0 V ICBO VCE=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VCE=1.5V 0.1 A VBEsat IC=10mA 3

2SC1675(3DG1675) NPN /SILICON NPN TRANSISTOR , / , / Purpose AM converter ,AM/FM IF amplifier and local oscillator of AM/FM tuner. , Features Small output capacitance, low noise figure. /Absolute maximum ratings

2SC1623(3DG1623) NPN /SILICON NPN TRANSISTOR /Purpose Audio frequency general amplifier application. h , V 2SA812(3CG812) /Features High h and V , complementary pair FE CEO, FE CEO with 2SA812(3CG812). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V

2SC1627AF(3DG1627AF) NPN /SILICON NPN TRANSISTOR Purpose Driver stage amplifier and voltage amplifier. 30 35W 2SA817AF(3CG817AF) Features Driver stage of 30 to 35 watts application, complementary pair with 2SA817AF(3CG817AF). /Absolute maximum ratings(