3DG160 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

3DG160 Specs and Replacement

Type Designator: 3DG160

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.02 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO18

3DG160 Substitution

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3DG160 datasheet

..1. Size:25K shaanxi

3dg160.pdf pdf_icon

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG160 NPN Silicon High Reverse Voltage High Frequency Low Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification... See More ⇒

9.1. Size:309K blue-rocket-elect

br3dg1684.pdf pdf_icon

2SC1684(BR3DG1684) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features , High hFE, low VCE(sat). / Applications General purpose amplifier. / Equivalent Circuit ... See More ⇒

9.2. Size:114K china

3dg162.pdf pdf_icon

3DG162 NPN A B C D E F G H I J PCM 300 mW IC 20 mA Tjm 175 V(BR)CB ICB=0.1mA 6 10 14 18 22 6 10 14 18 22 V 0 0 0 0 0 0 0 0 0 0 V(BR)CE ICE=0.1mA 6 10 14 18 22 6 10 14 18 22 V O 0 0 0 0 0 V(BR)EB 5.0 0 0 0 0 0 V ... See More ⇒

9.3. Size:126K china

3dg161.pdf pdf_icon

3DG161(A G) NPN A B C D E F G PCM TA=25 300 mW ICM 20 mA Tjm 175 Tstg -55 150 V(BR)CEO ICE=0.5mA 60 100 140 180 220 260 300 V 0 V(BR)EBO IEB=0.1mA 5.0 V ICBO VCE=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VCE=1.5V 0.1 A VBEsat IC=10mA 3... See More ⇒