Справочник транзисторов. 2N91

 

Биполярный транзистор 2N91 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2N91
   Тип материала: Ge
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.125 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 15 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Предельная температура PN-перехода (Tj): 75 °C
   Ёмкость коллекторного перехода (Cc): 75 pf
   Статический коэффициент передачи тока (hfe): 15
   Корпус транзистора: TO22

 Аналоги (замена) для 2N91

 

 

2N91 Datasheet (PDF)

 0.1. Size:277K  rca
2n914.pdf

2N91

 0.2. Size:115K  st
2n3600 bfx73 2n918.pdf

2N91
2N91

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 0.3. Size:62K  central
2n918 pn918.pdf

2N91

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 0.4. Size:8K  no
2n910-s 2n911-s 2n912-s.pdf

2N91
2N91

The documentation and process conversion measuresINCH-POUNDnecessary to comply with this amendment shall becompleted by 6 June 2001. MIL-S-19500/274CAMENDMENT 16 March 2001MILITARY SPECIFICATIONSEMICONDUCTOR DEVICE, NPN, SILICON, TRANSISTORSTYPES 2N910, 2N910S, 2N911, 2N911S, 2N912, AND 2N912S, JAN AND JANTXInactive for new design after 7 June 1999.This amendment forms a par

 0.5. Size:10K  semelab
2n916csm.pdf

2N91

2N916CSMDimensions in mm (inches). Bipolar NPN Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31rad.(0.012) Ceramic Surface Mount 3Package for High Reliability Applications 211.91 0.10(0.075 0.004)A0.31rad.Bipolar NPN Device. (0.012)3.05 0.13(0.12 0.005)1.40(0.055)1.02 0.10max.VCEO = 25V A =(0.04 0.004)

 0.6. Size:10K  semelab
2n916dcsm.pdf

2N91

2N916DCSMDimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar NPN Devices. A0.236 5rad. (0.009) V = 25V CEO6.22 0.13 A = 1.27 0.13I = 0.1A C(0.05

 0.7. Size:14K  semelab
2n918adcsm.pdf

2N91

2N918ADCSMELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. UnitVCB=15V IE=0 10 nAICBO Collector Cutoff Current Ta=150C 1 A V(BR)CBO IC=1A IE=0 Collector Base Breakdown Voltage 30VCEO(sus) IC=3mA IB=0 Collector Emitter Sustaining Voltage 15V(BR)EBO IE=10A IC=0 Emitter Base Breakdown Voltag

 0.8. Size:11K  semelab
2n918dcsm.pdf

2N91

2N918DCSMDimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar NPN Devices. A0.236 5rad. (0.009) V = 15V CEO6.22 0.13 A = 1.27 0.13I = 0.003A C(0.

 0.9. Size:135K  cdil
2n917.pdf

2N91
2N91

Continental Device India LimitedAn ISO/TS16949 and ISO 9001 Certified CompanyNPN SILICON PLANAR TRANSISTOR 2N917TO-72Metal Can PackageAmplifier TransistorABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage 30 VVCEOCollector Emitter Voltage 15 VVEBOEmitter Base Voltage 3VICCollector Current - Continuous 50 mAPDPower Dissipation @ TA=

Другие транзисторы... 2N902 , 2N903 , 2N904 , 2N905 , 2N906 , 2N907 , 2N908 , 2N909 , A970 , 2N910 , 2N911 , 2N912 , 2N913 , 2N914 , 2N914-46 , 2N914-51 , 2N914A .

 

 
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