2N91 datasheet и подбор замены

 0.1. Size:277K  rca
 2n914.pdf 

 0.2. Size:115K  st
 2n3600 bfx73 2n918.pdf 

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 0.3. Size:62K  central
 2n918 pn918.pdf 

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 0.4. Size:8K  no
 2n910-s 2n911-s 2n912-s.pdf 

The documentation and process conversion measures INCH-POUND necessary to comply with this amendment shall be completed by 6 June 2001. MIL-S-19500/274C AMENDMENT 1 6 March 2001 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, NPN, SILICON, TRANSISTORS TYPES 2N910, 2N910S, 2N911, 2N911S, 2N912, AND 2N912S, JAN AND JANTX Inactive for new design after 7 June 1999. This amendment forms a par

 0.5. Size:10K  semelab
 2n916dcsm.pdf 

2N916DCSM Dimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar NPN Devices. A 0.23 6 5 rad. (0.009) V = 25V CEO 6.22 0.13 A = 1.27 0.13 I = 0.1A C (0.05

 0.6. Size:11K  semelab
 2n918dcsm.pdf 

2N918DCSM Dimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar NPN Devices. A 0.23 6 5 rad. (0.009) V = 15V CEO 6.22 0.13 A = 1.27 0.13 I = 0.003A C (0.

 0.7. Size:14K  semelab
 2n918adcsm.pdf 

2N918ADCSM ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit VCB=15V IE=0 10 nA ICBO Collector Cutoff Current Ta=150 C 1 A V(BR)CBO IC=1 A IE=0 Collector Base Breakdown Voltage 30 VCEO(sus) IC=3mA IB=0 Collector Emitter Sustaining Voltage 15 V(BR)EBO IE=10 A IC=0 Emitter Base Breakdown Voltag

 0.8. Size:10K  semelab
 2n916csm.pdf 

2N916CSM Dimensions in mm (inches). Bipolar NPN Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31 rad. (0.012) Ceramic Surface Mount 3 Package for High Reliability Applications 21 1.91 0.10 (0.075 0.004) A 0.31 rad. Bipolar NPN Device. (0.012) 3.05 0.13 (0.12 0.005) 1.40 (0.055) 1.02 0.10 max. VCEO = 25V A = (0.04 0.004)

 0.9. Size:135K  cdil
 2n917.pdf 

Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N917 TO-72 Metal Can Package Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCBO Collector Base Voltage 30 V VCEO Collector Emitter Voltage 15 V VEBO Emitter Base Voltage 3V IC Collector Current - Continuous 50 mA PD Power Dissipation @ TA=