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The documentation and process conversion measuresINCH-POUNDnecessary to comply with this amendment shall becompleted by 6 June 2001. MIL-S-19500/274CAMENDMENT 16 March 2001MILITARY SPECIFICATIONSEMICONDUCTOR DEVICE, NPN, SILICON, TRANSISTORSTYPES 2N910, 2N910S, 2N911, 2N911S, 2N912, AND 2N912S, JAN AND JANTXInactive for new design after 7 June 1999.This amendment forms a par

2N916DCSMDimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar NPN Devices. A0.236 5rad. (0.009) V = 25V CEO6.22 0.13 A = 1.27 0.13I = 0.1A C(0.05

2N918DCSMDimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar NPN Devices. A0.236 5rad. (0.009) V = 15V CEO6.22 0.13 A = 1.27 0.13I = 0.003A C(0.

2N918ADCSMELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. UnitVCB=15V IE=0 10 nAICBO Collector Cutoff Current Ta=150C 1 A V(BR)CBO IC=1A IE=0 Collector Base Breakdown Voltage 30VCEO(sus) IC=3mA IB=0 Collector Emitter Sustaining Voltage 15V(BR)EBO IE=10A IC=0 Emitter Base Breakdown Voltag

2N916CSMDimensions in mm (inches). Bipolar NPN Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31rad.(0.012) Ceramic Surface Mount 3Package for High Reliability Applications 211.91 0.10(0.075 0.004)A0.31rad.Bipolar NPN Device. (0.012)3.05 0.13(0.12 0.005)1.40(0.055)1.02 0.10max.VCEO = 25V A =(0.04 0.004)

Continental Device India LimitedAn ISO/TS16949 and ISO 9001 Certified CompanyNPN SILICON PLANAR TRANSISTOR 2N917TO-72Metal Can PackageAmplifier TransistorABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage 30 VVCEOCollector Emitter Voltage 15 VVEBOEmitter Base Voltage 3VICCollector Current - Continuous 50 mAPDPower Dissipation @ TA=