Биполярный транзистор 2N3771G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N3771G
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 150 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 30 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 0.2 MHz
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: TO3
2N3771G Datasheet (PDF)
2n3771g.pdf
2N3771, 2N37722N3771 is a Preferred DeviceHigh Power NPN SiliconPower TransistorsThese devices are designed for linear amplifiers, series passregulators, and inductive switching applications.Featureshttp://onsemi.com Forward Biased Second Breakdown Current Capability20 and 30 AMPEREIS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 POWER TRANSISTO
2n3771re.pdf
Order this documentMOTOROLAby 2N3771/DSEMICONDUCTOR TECHNICAL DATA*2N3771High Power NPN Silicon Power2N3772Transistors*Motorola Preferred Device. . . designed for linear amplifiers, series pass regulators, and inductive switching20 and 30 AMPEREapplications.POWER TRANSISTORS Forward Biased Second Breakdown Current CapabilityNPN SILICONIS/b = 3.75 Adc @ VCE = 4
2n3771.pdf
2N37712N3772HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERREDSALESTYPESDESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-baseNPN transistors mounted in Jedec Jedec TO-3metal case. They are intended for linearamplifiers and inductive switching applications.12TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit2N3771
2n3771 2n3772.pdf
2N37712N3772HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERREDSALESTYPESDESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-baseNPN transistors mounted in Jedec Jedec TO-3metal case. They are intended for linearamplifiers and inductive switching applications.12TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit2N3771
2n3771 2n3772.pdf
2N3771, 2N37722N3771 is a Preferred DeviceHigh Power NPN SiliconPower TransistorsThese devices are designed for linear amplifiers, series passregulators, and inductive switching applications.Featureshttp://onsemi.com Forward Biased Second Breakdown Current Capability20 and 30 AMPEREIS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 POWER TRANSISTO
2n3771.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2N3771DESCRIPTIONExcellent Safe Operating AreaHigh DC Current Gain-h =15(Min)@I = 15AFE CLow Saturation Voltage-: V )= 2.0V(Max)@ I = 15ACE(sat CAPPLICATIONSDesigned for linear amplifiers, series pass regulators, andinductive switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
2n3771.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N3771DESCRIPTIONExcellent Safe Operating AreaHigh DC Current Gain-h =15(Min)@I = 15AFE CLow Saturation Voltage-: V )= 2.0V(Max)@ I = 15ACE(sat C100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for linear amplifiers, series pass
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
