2N3771G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2N3771, 2N37722N3771 is a Preferred DeviceHigh Power NPN SiliconPower TransistorsThese devices are designed for linear amplifiers, series passregulators, and inductive switching applications.Featureshttp://onsemi.com Forward Biased Second Breakdown Current Capability20 and 30 AMPEREIS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 POWER TRANSISTO

Order this documentMOTOROLAby 2N3771/DSEMICONDUCTOR TECHNICAL DATA*2N3771High Power NPN Silicon Power2N3772Transistors*Motorola Preferred Device. . . designed for linear amplifiers, series pass regulators, and inductive switching20 and 30 AMPEREapplications.POWER TRANSISTORS Forward Biased Second Breakdown Current CapabilityNPN SILICONIS/b = 3.75 Adc @ VCE = 4

2N37712N3772HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERREDSALESTYPESDESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-baseNPN transistors mounted in Jedec Jedec TO-3metal case. They are intended for linearamplifiers and inductive switching applications.12TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit2N3771

2N37712N3772HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERREDSALESTYPESDESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-baseNPN transistors mounted in Jedec Jedec TO-3metal case. They are intended for linearamplifiers and inductive switching applications.12TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit2N3771

2N3771, 2N37722N3771 is a Preferred DeviceHigh Power NPN SiliconPower TransistorsThese devices are designed for linear amplifiers, series passregulators, and inductive switching applications.Featureshttp://onsemi.com Forward Biased Second Breakdown Current Capability20 and 30 AMPEREIS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 POWER TRANSISTO

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2N3771DESCRIPTIONExcellent Safe Operating AreaHigh DC Current Gain-h =15(Min)@I = 15AFE CLow Saturation Voltage-: V )= 2.0V(Max)@ I = 15ACE(sat CAPPLICATIONSDesigned for linear amplifiers, series pass regulators, andinductive switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N3771DESCRIPTIONExcellent Safe Operating AreaHigh DC Current Gain-h =15(Min)@I = 15AFE CLow Saturation Voltage-: V )= 2.0V(Max)@ I = 15ACE(sat C100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for linear amplifiers, series pass