2N3771G Todos los transistores

2N3771, 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features http //onsemi.com Forward Biased Second Breakdown Current Capability 20 and 30 AMPERE IS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 POWER TRANSISTO

Order this document MOTOROLA by 2N3771/D SEMICONDUCTOR TECHNICAL DATA * 2N3771 High Power NPN Silicon Power 2N3772 Transistors *Motorola Preferred Device . . . designed for linear amplifiers, series pass regulators, and inductive switching 20 and 30 AMPERE applications. POWER TRANSISTORS Forward Biased Second Breakdown Current Capability NPN SILICON IS/b = 3.75 Adc @ VCE = 4

2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N3771

2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N3771

2N3771, 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features http //onsemi.com Forward Biased Second Breakdown Current Capability 20 and 30 AMPERE IS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 POWER TRANSISTO

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2N3771 DESCRIPTION Excellent Safe Operating Area High DC Current Gain-h =15(Min)@I = 15A FE C Low Saturation Voltage- V )= 2.0V(Max)@ I = 15A CE(sat C APPLICATIONS Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3771 DESCRIPTION Excellent Safe Operating Area High DC Current Gain-h =15(Min)@I = 15A FE C Low Saturation Voltage- V )= 2.0V(Max)@ I = 15A CE(sat C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for linear amplifiers, series pass