2N3771G Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N3771G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
2N3771G Transistor Equivalent Substitute - Cross-Reference Search
2N3771G Datasheet (PDF)
2n3771g.pdf
2N3771, 2N37722N3771 is a Preferred DeviceHigh Power NPN SiliconPower TransistorsThese devices are designed for linear amplifiers, series passregulators, and inductive switching applications.Featureshttp://onsemi.com Forward Biased Second Breakdown Current Capability20 and 30 AMPEREIS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 POWER TRANSISTO
2n3771re.pdf
Order this documentMOTOROLAby 2N3771/DSEMICONDUCTOR TECHNICAL DATA*2N3771High Power NPN Silicon Power2N3772Transistors*Motorola Preferred Device. . . designed for linear amplifiers, series pass regulators, and inductive switching20 and 30 AMPEREapplications.POWER TRANSISTORS Forward Biased Second Breakdown Current CapabilityNPN SILICONIS/b = 3.75 Adc @ VCE = 4
2n3771.pdf
2N37712N3772HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERREDSALESTYPESDESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-baseNPN transistors mounted in Jedec Jedec TO-3metal case. They are intended for linearamplifiers and inductive switching applications.12TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit2N3771
2n3771 2n3772.pdf
2N37712N3772HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERREDSALESTYPESDESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-baseNPN transistors mounted in Jedec Jedec TO-3metal case. They are intended for linearamplifiers and inductive switching applications.12TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit2N3771
2n3771 2n3772.pdf
2N3771, 2N37722N3771 is a Preferred DeviceHigh Power NPN SiliconPower TransistorsThese devices are designed for linear amplifiers, series passregulators, and inductive switching applications.Featureshttp://onsemi.com Forward Biased Second Breakdown Current Capability20 and 30 AMPEREIS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 POWER TRANSISTO
2n3771.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2N3771DESCRIPTIONExcellent Safe Operating AreaHigh DC Current Gain-h =15(Min)@I = 15AFE CLow Saturation Voltage-: V )= 2.0V(Max)@ I = 15ACE(sat CAPPLICATIONSDesigned for linear amplifiers, series pass regulators, andinductive switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
2n3771.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N3771DESCRIPTIONExcellent Safe Operating AreaHigh DC Current Gain-h =15(Min)@I = 15AFE CLow Saturation Voltage-: V )= 2.0V(Max)@ I = 15ACE(sat C100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for linear amplifiers, series pass
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
