BCP68T1G. Аналоги и основные параметры

Наименование производителя: BCP68T1G

Маркировка: CA

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 1.5 W

Макcимально допустимое напряжение коллектор-база (Ucb): 25 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 60 MHz

Статический коэффициент передачи тока (hFE): 85

Корпус транзистора: SOT223

 Аналоги (замена) для BCP68T1G

- подборⓘ биполярного транзистора по параметрам

 

BCP68T1G даташит

 ..1. Size:197K  onsemi
 bcp68t1g.pdf pdf_icon

BCP68T1G

NPN Silicon Epitaxial Transistor BCP68T1G This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface www.onsemi.com mount applications. Features MEDIUM POWER NPN SILICON High Current HIGH CURRENT TRANSISTOR The SOT-223 Package Can Be Soldered Usin

 0.1. Size:108K  onsemi
 sbcp68t1g.pdf pdf_icon

BCP68T1G

BCP68T1G NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface http //onsemi.com mount applications. Features MEDIUM POWER NPN SILICON High Current HIGH CURRENT TRANSISTOR The SOT-223 Package Can Be Soldered U

 7.1. Size:149K  motorola
 bcp68t1r.pdf pdf_icon

BCP68T1G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCP68T1/D BCP68T1 NPN Silicon Motorola Preferred Device Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current MEDIUM POWER applications. The device is housed in the SOT-223 package, which is designed for NPN SILICON medium power surface mount applications. HIGH CURRENT

 7.2. Size:128K  onsemi
 bcp68t1.pdf pdf_icon

BCP68T1G

BCP68T1G NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT--223 package, which is designed for medium power surface http //onsemi.com mount applications. Features MEDIUM POWER NPN SILICON High Current IC =1.0 A HIGH CURRENT TRANSISTOR The SOT--223 Package Can

ПОКАЗАТЬ ЕЩЁ

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