Справочник транзисторов. BCP68T1G

 

Биполярный транзистор BCP68T1G Даташит. Аналоги


   Наименование производителя: BCP68T1G
   Маркировка: CA
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 1.5 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 60 MHz
   Статический коэффициент передачи тока (hfe): 85
   Корпус транзистора: SOT223
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BCP68T1G Datasheet (PDF)

 ..1. Size:197K  onsemi
 bcp68t1g.pdf pdf_icon

BCP68T1G

NPN SiliconEpitaxial TransistorBCP68T1GThis NPN Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacewww.onsemi.commount applications.FeaturesMEDIUM POWER NPN SILICON High CurrentHIGH CURRENT TRANSISTOR The SOT-223 Package Can Be Soldered Usin

 0.1. Size:108K  onsemi
 sbcp68t1g.pdf pdf_icon

BCP68T1G

BCP68T1GNPN SiliconEpitaxial TransistorThis NPN Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER NPN SILICON High CurrentHIGH CURRENT TRANSISTOR The SOT-223 Package Can Be Soldered U

 7.1. Size:149K  motorola
 bcp68t1r.pdf pdf_icon

BCP68T1G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCP68T1/DBCP68T1NPN SiliconMotorola Preferred DeviceEpitaxial TransistorThis NPN Silicon Epitaxial Transistor is designed for use in low voltage, high currentMEDIUM POWERapplications. The device is housed in the SOT-223 package, which is designed forNPN SILICONmedium power surface mount applications.HIGH CURRENT

 7.2. Size:128K  onsemi
 bcp68t1.pdf pdf_icon

BCP68T1G

BCP68T1GNPN SiliconEpitaxial TransistorThis NPN Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT--223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER NPN SILICON High Current: IC =1.0 AHIGH CURRENT TRANSISTOR The SOT--223 Package Can

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History: BCP56-16T3G | BCAP13-16 | BD679AG

 

 
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