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BCP68T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BCP68T1G
   Código: CA
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.5 W
   Tensión colector-base (Vcb): 25 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 60 MHz
   Ganancia de corriente contínua (hfe): 85
   Paquete / Cubierta: SOT223
 

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BCP68T1G Datasheet (PDF)

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BCP68T1G

NPN SiliconEpitaxial TransistorBCP68T1GThis NPN Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacewww.onsemi.commount applications.FeaturesMEDIUM POWER NPN SILICON High CurrentHIGH CURRENT TRANSISTOR The SOT-223 Package Can Be Soldered Usin

 0.1. Size:108K  onsemi
 sbcp68t1g.pdf pdf_icon

BCP68T1G

BCP68T1GNPN SiliconEpitaxial TransistorThis NPN Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER NPN SILICON High CurrentHIGH CURRENT TRANSISTOR The SOT-223 Package Can Be Soldered U

 7.1. Size:149K  motorola
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BCP68T1G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCP68T1/DBCP68T1NPN SiliconMotorola Preferred DeviceEpitaxial TransistorThis NPN Silicon Epitaxial Transistor is designed for use in low voltage, high currentMEDIUM POWERapplications. The device is housed in the SOT-223 package, which is designed forNPN SILICONmedium power surface mount applications.HIGH CURRENT

 7.2. Size:128K  onsemi
 bcp68t1.pdf pdf_icon

BCP68T1G

BCP68T1GNPN SiliconEpitaxial TransistorThis NPN Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT--223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER NPN SILICON High Current: IC =1.0 AHIGH CURRENT TRANSISTOR The SOT--223 Package Can

MOSTRAR MÁS

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History: BFR54 | 2SC77 | SGSD210 | SGSD93G | GD609 | RCA30B

 

 
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