BCP68T1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BCP68T1G  📄📄 

Código: CA

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.5 W

Tensión colector-base (Vcb): 25 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 60 MHz

Ganancia de corriente contínua (hFE): 85

Encapsulados: SOT223

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BCP68T1G datasheet

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BCP68T1G

NPN Silicon Epitaxial Transistor BCP68T1G This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface www.onsemi.com mount applications. Features MEDIUM POWER NPN SILICON High Current HIGH CURRENT TRANSISTOR The SOT-223 Package Can Be Soldered Usin

 0.1. Size:108K  onsemi
 sbcp68t1g.pdf pdf_icon

BCP68T1G

BCP68T1G NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface http //onsemi.com mount applications. Features MEDIUM POWER NPN SILICON High Current HIGH CURRENT TRANSISTOR The SOT-223 Package Can Be Soldered U

 7.1. Size:149K  motorola
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BCP68T1G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCP68T1/D BCP68T1 NPN Silicon Motorola Preferred Device Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current MEDIUM POWER applications. The device is housed in the SOT-223 package, which is designed for NPN SILICON medium power surface mount applications. HIGH CURRENT

 7.2. Size:128K  onsemi
 bcp68t1.pdf pdf_icon

BCP68T1G

BCP68T1G NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT--223 package, which is designed for medium power surface http //onsemi.com mount applications. Features MEDIUM POWER NPN SILICON High Current IC =1.0 A HIGH CURRENT TRANSISTOR The SOT--223 Package Can

MOSTRAR MÁS

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