BCP68T1G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BCP68T1G
Código: CA
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.5
W
Tensión colector-base (Vcb): 25
V
Tensión colector-emisor (Vce): 20
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 60
MHz
Ganancia de corriente contínua (hfe): 85
Paquete / Cubierta:
SOT223
Búsqueda de reemplazo de transistor bipolar BCP68T1G
BCP68T1G
Datasheet (PDF)
..1. Size:197K onsemi
bcp68t1g.pdf
NPN SiliconEpitaxial TransistorBCP68T1GThis NPN Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacewww.onsemi.commount applications.FeaturesMEDIUM POWER NPN SILICON High CurrentHIGH CURRENT TRANSISTOR The SOT-223 Package Can Be Soldered Usin
0.1. Size:108K onsemi
sbcp68t1g.pdf
BCP68T1GNPN SiliconEpitaxial TransistorThis NPN Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER NPN SILICON High CurrentHIGH CURRENT TRANSISTOR The SOT-223 Package Can Be Soldered U
7.1. Size:149K motorola
bcp68t1r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCP68T1/DBCP68T1NPN SiliconMotorola Preferred DeviceEpitaxial TransistorThis NPN Silicon Epitaxial Transistor is designed for use in low voltage, high currentMEDIUM POWERapplications. The device is housed in the SOT-223 package, which is designed forNPN SILICONmedium power surface mount applications.HIGH CURRENT
7.2. Size:128K onsemi
bcp68t1.pdf
BCP68T1GNPN SiliconEpitaxial TransistorThis NPN Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT--223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER NPN SILICON High Current: IC =1.0 AHIGH CURRENT TRANSISTOR The SOT--223 Package Can
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