All Transistors. BCP68T1G Datasheet

 

BCP68T1G Datasheet and Replacement


   Type Designator: BCP68T1G
   SMD Transistor Code: CA
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.5 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 60 MHz
   Forward Current Transfer Ratio (hFE), MIN: 85
   Noise Figure, dB: -
   Package: SOT223
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BCP68T1G Datasheet (PDF)

 ..1. Size:197K  onsemi
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BCP68T1G

NPN SiliconEpitaxial TransistorBCP68T1GThis NPN Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacewww.onsemi.commount applications.FeaturesMEDIUM POWER NPN SILICON High CurrentHIGH CURRENT TRANSISTOR The SOT-223 Package Can Be Soldered Usin

 0.1. Size:108K  onsemi
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BCP68T1G

BCP68T1GNPN SiliconEpitaxial TransistorThis NPN Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER NPN SILICON High CurrentHIGH CURRENT TRANSISTOR The SOT-223 Package Can Be Soldered U

 7.1. Size:149K  motorola
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BCP68T1G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCP68T1/DBCP68T1NPN SiliconMotorola Preferred DeviceEpitaxial TransistorThis NPN Silicon Epitaxial Transistor is designed for use in low voltage, high currentMEDIUM POWERapplications. The device is housed in the SOT-223 package, which is designed forNPN SILICONmedium power surface mount applications.HIGH CURRENT

 7.2. Size:128K  onsemi
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BCP68T1G

BCP68T1GNPN SiliconEpitaxial TransistorThis NPN Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT--223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER NPN SILICON High Current: IC =1.0 AHIGH CURRENT TRANSISTOR The SOT--223 Package Can

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