All Transistors. BCP68T1G Datasheet

 

BCP68T1G Datasheet, Equivalent, Cross Reference Search

Type Designator: BCP68T1G

SMD Transistor Code: CA

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1.5 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 60 MHz

Forward Current Transfer Ratio (hFE), MIN: 85

Noise Figure, dB: -

Package: SOT223

BCP68T1G Transistor Equivalent Substitute - Cross-Reference Search

 

BCP68T1G Datasheet (PDF)

1.1. sbcp68t1g.pdf Size:108K _update

BCP68T1G
BCP68T1G

BCP68T1G NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface http://onsemi.com mount applications. Features MEDIUM POWER NPN SILICON • High Current HIGH CURRENT TRANSISTOR • The SOT-223 Package Can Be Soldered U

1.2. bcp68t1g.pdf Size:48K _upd

BCP68T1G
BCP68T1G

BCP68T1 Preferred Device NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. Features MEDIUM POWER NPN SILICON • High Current: IC = 1.0 A HIGH CURRENT TRANSISTOR • The SOT-223 package can be

 3.1. bcp68t1r.pdf Size:149K _motorola

BCP68T1G
BCP68T1G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCP68T1/D BCP68T1 NPN Silicon Motorola Preferred Device Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current MEDIUM POWER applications. The device is housed in the SOT-223 package, which is designed for NPN SILICON medium power surface mount applications. HIGH CURRENT

3.2. bcp68t1.pdf Size:128K _onsemi

BCP68T1G
BCP68T1G

BCP68T1G NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT--223 package, which is designed for medium power surface http://onsemi.com mount applications. Features MEDIUM POWER NPN SILICON ? High Current: IC =1.0 A HIGH CURRENT TRANSISTOR ? The SOT--223 Package Can Be Sold

Datasheet: BCP53T1G , BCP56-10T1G , BCP56-10T3G , BCP5616Q , BCP56-16T1G , BCP56-16T3G , BCP56T1G , BCP56T3G , BU508 , BCP69T1G , BCW30LT1G , BCW32LT1G , BCW33LT1G , BCW33LT3G , BCW35X , BCW65ALT1G , BCW65CLT1G .

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