BCP68T1G Specs and Replacement

Type Designator: BCP68T1G

SMD Transistor Code: CA

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.5 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 60 MHz

Forward Current Transfer Ratio (hFE), MIN: 85

Noise Figure, dB: -

Package: SOT223

 BCP68T1G Substitution

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BCP68T1G datasheet

 ..1. Size:197K  onsemi

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BCP68T1G

NPN Silicon Epitaxial Transistor BCP68T1G This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface www.onsemi.com mount applications. Features MEDIUM POWER NPN SILICON High Current HIGH CURRENT TRANSISTOR The SOT-223 Package Can Be Soldered Usin... See More ⇒

 0.1. Size:108K  onsemi

sbcp68t1g.pdf pdf_icon

BCP68T1G

BCP68T1G NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface http //onsemi.com mount applications. Features MEDIUM POWER NPN SILICON High Current HIGH CURRENT TRANSISTOR The SOT-223 Package Can Be Soldered U... See More ⇒

 7.1. Size:149K  motorola

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BCP68T1G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCP68T1/D BCP68T1 NPN Silicon Motorola Preferred Device Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current MEDIUM POWER applications. The device is housed in the SOT-223 package, which is designed for NPN SILICON medium power surface mount applications. HIGH CURRENT... See More ⇒

 7.2. Size:128K  onsemi

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BCP68T1G

BCP68T1G NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT--223 package, which is designed for medium power surface http //onsemi.com mount applications. Features MEDIUM POWER NPN SILICON High Current IC =1.0 A HIGH CURRENT TRANSISTOR The SOT--223 Package Can ... See More ⇒

Detailed specifications: BCP53T1G, BCP56-10T1G, BCP56-10T3G, BCP5616Q, BCP56-16T1G, BCP56-16T3G, BCP56T1G, BCP56T3G, 2SC2240, BCP69T1G, BCW30LT1G, BCW32LT1G, BCW33LT1G, BCW33LT3G, BCW35X, BCW65ALT1G, BCW65CLT1G

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