Справочник транзисторов. BCP69T1G

 

Биполярный транзистор BCP69T1G - описание производителя. Основные параметры. Даташиты.

Наименование производителя: BCP69T1G

Маркировка: CE

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 1.5 W

Макcимально допустимое напряжение коллектор-база (Ucb): 25 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 1 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 60 MHz

Статический коэффициент передачи тока (hfe): 85

Корпус транзистора: SOT223

Аналоги (замена) для BCP69T1G

 

 

BCP69T1G Datasheet (PDF)

1.1. bcp69t1g.pdf Size:89K _upd

BCP69T1G
BCP69T1G

BCP69T1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223-4 package, which is designed for medium power surface http://onsemi.com mount applications. • High Current: IC = -1.0 A MEDIUM POWER • The SOT-223-4 Package can be soldered using wave or

1.2. nsvbcp69t1g.pdf Size:122K _onsemi

BCP69T1G
BCP69T1G

BCP69T1G, NSVBCP69T1G PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface http://onsemi.com mount applications. Features MEDIUM POWER • High Current: IC = -1.0 A PNP SILICON • The SOT-223 Package Can Be Soldered

3.1. bcp69t1rev2.pdf Size:71K _motorola

BCP69T1G
BCP69T1G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCP69T1/D BCP69T1 PNP Silicon Motorola Preferred Device Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current MEDIUM POWER applications. The device is housed in the SOT-223 package, which is designed for PNP SILICON medium power surface mount applications. HIGH CURRENT

3.2. bcp69t1-d.pdf Size:96K _onsemi

BCP69T1G
BCP69T1G

BCP69T1G PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface http://onsemi.com mount applications. Features MEDIUM POWER High Current: IC = -1.0 A PNP SILICON The SOT-223 Package Can Be Soldered Using Wave or Reflo

Другие транзисторы... BCP56-10T1G , BCP56-10T3G , BCP5616Q , BCP56-16T1G , BCP56-16T3G , BCP56T1G , BCP56T3G , BCP68T1G , 2SC828 , BCW30LT1G , BCW32LT1G , BCW33LT1G , BCW33LT3G , BCW35X , BCW65ALT1G , BCW65CLT1G , BCW66GLT1G .

 


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Список транзисторов

Обновления

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