Биполярный транзистор BCP69T1G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BCP69T1G
Маркировка: CE
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 1.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 60 MHz
Статический коэффициент передачи тока (hfe): 85
Корпус транзистора: SOT223
BCP69T1G Datasheet (PDF)
bcp69t1g nsvbcp69t1g.pdf
BCP69T1G, NSVBCP69T1GPNP SiliconEpitaxial TransistorThis PNP Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER High Current: IC = -1.0 APNP SILICON The SOT-223 Package Can Be Soldered
bcp69t1g.pdf
BCP69T1Preferred Device PNP SiliconEpitaxial TransistorThis PNP Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223-4 package, which is designed for medium power surfacehttp://onsemi.commount applications. High Current: IC = -1.0 AMEDIUM POWER The SOT-223-4 Package can be soldered using wave or
nsvbcp69t1g.pdf
BCP69T1G, NSVBCP69T1GPNP SiliconEpitaxial TransistorThis PNP Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER High Current: IC = -1.0 APNP SILICON The SOT-223 Package Can Be Soldered
bcp69t1rev2.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCP69T1/DBCP69T1PNP SiliconMotorola Preferred DeviceEpitaxial TransistorThis PNP Silicon Epitaxial Transistor is designed for use in low voltage, high currentMEDIUM POWERapplications. The device is housed in the SOT-223 package, which is designed forPNP SILICONmedium power surface mount applications.HIGH CURRENT
bcp69t1-d.pdf
BCP69T1GPNP SiliconEpitaxial TransistorThis PNP Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER High Current: IC = -1.0 APNP SILICON The SOT-223 Package Can Be Soldered Using Wave o
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
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