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BCP69T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BCP69T1G
   Código: CE
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.5 W
   Tensión colector-base (Vcb): 25 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 60 MHz
   Ganancia de corriente contínua (hfe): 85
   Paquete / Cubierta: SOT223
 

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BCP69T1G Datasheet (PDF)

 ..1. Size:126K  onsemi
bcp69t1g nsvbcp69t1g.pdf pdf_icon

BCP69T1G

BCP69T1G, NSVBCP69T1GPNP SiliconEpitaxial TransistorThis PNP Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER High Current: IC = -1.0 APNP SILICON The SOT-223 Package Can Be Soldered

 ..2. Size:89K  onsemi
bcp69t1g.pdf pdf_icon

BCP69T1G

BCP69T1Preferred Device PNP SiliconEpitaxial TransistorThis PNP Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223-4 package, which is designed for medium power surfacehttp://onsemi.commount applications. High Current: IC = -1.0 AMEDIUM POWER The SOT-223-4 Package can be soldered using wave or

 0.1. Size:122K  onsemi
nsvbcp69t1g.pdf pdf_icon

BCP69T1G

BCP69T1G, NSVBCP69T1GPNP SiliconEpitaxial TransistorThis PNP Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER High Current: IC = -1.0 APNP SILICON The SOT-223 Package Can Be Soldered

 7.1. Size:71K  motorola
bcp69t1rev2.pdf pdf_icon

BCP69T1G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCP69T1/DBCP69T1PNP SiliconMotorola Preferred DeviceEpitaxial TransistorThis PNP Silicon Epitaxial Transistor is designed for use in low voltage, high currentMEDIUM POWERapplications. The device is housed in the SOT-223 package, which is designed forPNP SILICONmedium power surface mount applications.HIGH CURRENT

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History: 2SD991 | SGSD93G | SGSD210 | MMBC1009F2 | 2SC77

 

 
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