All Transistors. BCP69T1G Datasheet

 

BCP69T1G Datasheet and Replacement


   Type Designator: BCP69T1G
   SMD Transistor Code: CE
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1.5 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 60 MHz
   Forward Current Transfer Ratio (hFE), MIN: 85
   Noise Figure, dB: -
   Package: SOT223
 

 BCP69T1G Substitution

   - BJT ⓘ Cross-Reference Search

   

BCP69T1G Datasheet (PDF)

 ..1. Size:126K  onsemi
 bcp69t1g nsvbcp69t1g.pdf pdf_icon

BCP69T1G

BCP69T1G, NSVBCP69T1GPNP SiliconEpitaxial TransistorThis PNP Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER High Current: IC = -1.0 APNP SILICON The SOT-223 Package Can Be Soldered

 ..2. Size:89K  onsemi
 bcp69t1g.pdf pdf_icon

BCP69T1G

BCP69T1Preferred Device PNP SiliconEpitaxial TransistorThis PNP Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223-4 package, which is designed for medium power surfacehttp://onsemi.commount applications. High Current: IC = -1.0 AMEDIUM POWER The SOT-223-4 Package can be soldered using wave or

 0.1. Size:122K  onsemi
 nsvbcp69t1g.pdf pdf_icon

BCP69T1G

BCP69T1G, NSVBCP69T1GPNP SiliconEpitaxial TransistorThis PNP Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER High Current: IC = -1.0 APNP SILICON The SOT-223 Package Can Be Soldered

 7.1. Size:71K  motorola
 bcp69t1rev2.pdf pdf_icon

BCP69T1G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCP69T1/DBCP69T1PNP SiliconMotorola Preferred DeviceEpitaxial TransistorThis PNP Silicon Epitaxial Transistor is designed for use in low voltage, high currentMEDIUM POWERapplications. The device is housed in the SOT-223 package, which is designed forPNP SILICONmedium power surface mount applications.HIGH CURRENT

SHOW MORE

Datasheet: BCP56-10T1G , BCP56-10T3G , BCP5616Q , BCP56-16T1G , BCP56-16T3G , BCP56T1G , BCP56T3G , BCP68T1G , 2SC2240 , BCW30LT1G , BCW32LT1G , BCW33LT1G , BCW33LT3G , BCW35X , BCW65ALT1G , BCW65CLT1G , BCW66GLT1G .

History: DTL3507 | FPC1383 | LBC817-16WT1G | BFR90A | BC848A-G | UN6119 | TS7990

Keywords - BCP69T1G transistor datasheet

 BCP69T1G cross reference
 BCP69T1G equivalent finder
 BCP69T1G lookup
 BCP69T1G substitution
 BCP69T1G replacement

 

 
Back to Top

 


 
.