BCP69T1G Specs and Replacement
Type Designator: BCP69T1G
SMD Transistor Code: CE
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 85
Package: SOT223
BCP69T1G Substitution
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BCP69T1G datasheet
BCP69T1G, NSVBCP69T1G PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface http //onsemi.com mount applications. Features MEDIUM POWER High Current IC = -1.0 A PNP SILICON The SOT-223 Package Can Be Soldered... See More ⇒
BCP69T1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223-4 package, which is designed for medium power surface http //onsemi.com mount applications. High Current IC = -1.0 A MEDIUM POWER The SOT-223-4 Package can be soldered using wave or... See More ⇒
BCP69T1G, NSVBCP69T1G PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface http //onsemi.com mount applications. Features MEDIUM POWER High Current IC = -1.0 A PNP SILICON The SOT-223 Package Can Be Soldered... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCP69T1/D BCP69T1 PNP Silicon Motorola Preferred Device Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current MEDIUM POWER applications. The device is housed in the SOT-223 package, which is designed for PNP SILICON medium power surface mount applications. HIGH CURRENT... See More ⇒
Detailed specifications: BCP56-10T1G, BCP56-10T3G, BCP5616Q, BCP56-16T1G, BCP56-16T3G, BCP56T1G, BCP56T3G, BCP68T1G, 2SA1015, BCW30LT1G, BCW32LT1G, BCW33LT1G, BCW33LT3G, BCW35X, BCW65ALT1G, BCW65CLT1G, BCW66GLT1G
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