Справочник транзисторов. MBT3946DW1T2G

 

Биполярный транзистор MBT3946DW1T2G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MBT3946DW1T2G
   Маркировка: 46
   Тип материала: Si
   Полярность: NPN*PNP
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.2 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 300 MHz
   Ёмкость коллекторного перехода (Cc): 4 pf
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: SOT-363

 Аналоги (замена) для MBT3946DW1T2G

 

 

MBT3946DW1T2G Datasheet (PDF)

 ..1. Size:174K  onsemi
mbt3946dw1t2g.pdf

MBT3946DW1T2G MBT3946DW1T2G

MBT3946DW1T1G,SMBT3946DW1T1GComplementary GeneralPurpose TransistorThe MBT3946DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363-6surface mount package. By putting two discrete devices in onepackage, this device is ideal for low-power surface mount

 3.1. Size:174K  onsemi
smbt3946dw1t1g mbt3946dw1t1g.pdf

MBT3946DW1T2G MBT3946DW1T2G

MBT3946DW1T1G,SMBT3946DW1T1GComplementary GeneralPurpose TransistorThe MBT3946DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363-6surface mount package. By putting two discrete devices in onepackage, this device is ideal for low-power surface mount

 3.2. Size:241K  onsemi
mbt3946dw1t1-d.pdf

MBT3946DW1T2G MBT3946DW1T2G

MBT3946DW1T1GDual General PurposeTransistorThe MBT3946DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT-363-6http://onsemi.comsurface mount package. By putting two discrete devices in onepackage, this device is ideal for low-power surface mount(3) (2) (1)applications

 3.3. Size:169K  onsemi
mbt3946dw1t1g smbt3946dw1t1g.pdf

MBT3946DW1T2G MBT3946DW1T2G

MBT3946DW1T1G,SMBT3946DW1T1GComplementary GeneralPurpose TransistorThe MBT3946DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363-6surface mount package. By putting two discrete devices in onepackage, this device is ideal for low-power surface mount

 3.4. Size:397K  willas
mmbt3946dw1t1.pdf

MBT3946DW1T2G MBT3946DW1T2G

FM120-M WILLAS MMBT3946DW1T1THRUDual General Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toTheM

 3.5. Size:664K  lrc
lmbt3946dw1t1g lmbt3946dw1t3g.pdf

MBT3946DW1T2G MBT3946DW1T2G

LMBT3946DW1T1GS-LMBT3946DW1T1GDual General Purpose Transistors PNP/NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.Low VCE(sat), 0.4 VS

 3.6. Size:664K  lrc
lmbt3946dw1t1g.pdf

MBT3946DW1T2G MBT3946DW1T2G

LMBT3946DW1T1GS-LMBT3946DW1T1GDual General Purpose Transistors PNP/NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.Low VCE(sat), 0.4 VS

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