Биполярный транзистор MBT3946DW1T2G Даташит. Аналоги
Наименование производителя: MBT3946DW1T2G
Маркировка: 46
Тип материала: Si
Полярность: NPN*PNP
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 300 MHz
Ёмкость коллекторного перехода (Cc): 4 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SOT-363
Аналог (замена) для MBT3946DW1T2G
MBT3946DW1T2G Datasheet (PDF)
mbt3946dw1t2g.pdf

MBT3946DW1T1G,SMBT3946DW1T1GComplementary GeneralPurpose TransistorThe MBT3946DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363-6surface mount package. By putting two discrete devices in onepackage, this device is ideal for low-power surface mount
smbt3946dw1t1g mbt3946dw1t1g.pdf

MBT3946DW1T1G,SMBT3946DW1T1GComplementary GeneralPurpose TransistorThe MBT3946DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363-6surface mount package. By putting two discrete devices in onepackage, this device is ideal for low-power surface mount
mbt3946dw1t1-d.pdf

MBT3946DW1T1GDual General PurposeTransistorThe MBT3946DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT-363-6http://onsemi.comsurface mount package. By putting two discrete devices in onepackage, this device is ideal for low-power surface mount(3) (2) (1)applications
mbt3946dw1t1g smbt3946dw1t1g.pdf

MBT3946DW1T1G,SMBT3946DW1T1GComplementary GeneralPurpose TransistorThe MBT3946DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363-6surface mount package. By putting two discrete devices in onepackage, this device is ideal for low-power surface mount
Другие транзисторы... M8550S , MA42 , MA92 , MAG9413 , MBT2222ADW1T1G , MBT35200MT1G , MBT3904DW1T3G , MBT3906DW1T2G , 2N3904 , MBT6517LT1 , MBTA06LT1 , RT3A66M , RT3A77M , RT3C66M , RT3C77M , RT3CLLM , RT3CRRM .
History: MJF6668 | PN3725 | 2SA678
History: MJF6668 | PN3725 | 2SA678



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