Справочник транзисторов. MBT3946DW1T2G

 

Биполярный транзистор MBT3946DW1T2G Даташит. Аналоги


   Наименование производителя: MBT3946DW1T2G
   Маркировка: 46
   Тип материала: Si
   Полярность: NPN*PNP
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.2 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 300 MHz
   Ёмкость коллекторного перехода (Cc): 4 pf
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: SOT-363
 

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MBT3946DW1T2G Datasheet (PDF)

 ..1. Size:174K  onsemi
mbt3946dw1t2g.pdfpdf_icon

MBT3946DW1T2G

MBT3946DW1T1G,SMBT3946DW1T1GComplementary GeneralPurpose TransistorThe MBT3946DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363-6surface mount package. By putting two discrete devices in onepackage, this device is ideal for low-power surface mount

 3.1. Size:174K  onsemi
smbt3946dw1t1g mbt3946dw1t1g.pdfpdf_icon

MBT3946DW1T2G

MBT3946DW1T1G,SMBT3946DW1T1GComplementary GeneralPurpose TransistorThe MBT3946DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363-6surface mount package. By putting two discrete devices in onepackage, this device is ideal for low-power surface mount

 3.2. Size:241K  onsemi
mbt3946dw1t1-d.pdfpdf_icon

MBT3946DW1T2G

MBT3946DW1T1GDual General PurposeTransistorThe MBT3946DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT-363-6http://onsemi.comsurface mount package. By putting two discrete devices in onepackage, this device is ideal for low-power surface mount(3) (2) (1)applications

 3.3. Size:169K  onsemi
mbt3946dw1t1g smbt3946dw1t1g.pdfpdf_icon

MBT3946DW1T2G

MBT3946DW1T1G,SMBT3946DW1T1GComplementary GeneralPurpose TransistorThe MBT3946DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363-6surface mount package. By putting two discrete devices in onepackage, this device is ideal for low-power surface mount

Другие транзисторы... M8550S , MA42 , MA92 , MAG9413 , MBT2222ADW1T1G , MBT35200MT1G , MBT3904DW1T3G , MBT3906DW1T2G , 2N3904 , MBT6517LT1 , MBTA06LT1 , RT3A66M , RT3A77M , RT3C66M , RT3C77M , RT3CLLM , RT3CRRM .

History: MJF6668 | PN3725 | 2SA678

 

 
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