All Transistors. MBT3946DW1T2G Datasheet

 

MBT3946DW1T2G Datasheet and Replacement


   Type Designator: MBT3946DW1T2G
   SMD Transistor Code: 46
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-363
 

 MBT3946DW1T2G Substitution

   - BJT ⓘ Cross-Reference Search

   

MBT3946DW1T2G Datasheet (PDF)

 ..1. Size:174K  onsemi
mbt3946dw1t2g.pdf pdf_icon

MBT3946DW1T2G

MBT3946DW1T1G,SMBT3946DW1T1GComplementary GeneralPurpose TransistorThe MBT3946DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363-6surface mount package. By putting two discrete devices in onepackage, this device is ideal for low-power surface mount

 3.1. Size:174K  onsemi
smbt3946dw1t1g mbt3946dw1t1g.pdf pdf_icon

MBT3946DW1T2G

MBT3946DW1T1G,SMBT3946DW1T1GComplementary GeneralPurpose TransistorThe MBT3946DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363-6surface mount package. By putting two discrete devices in onepackage, this device is ideal for low-power surface mount

 3.2. Size:241K  onsemi
mbt3946dw1t1-d.pdf pdf_icon

MBT3946DW1T2G

MBT3946DW1T1GDual General PurposeTransistorThe MBT3946DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT-363-6http://onsemi.comsurface mount package. By putting two discrete devices in onepackage, this device is ideal for low-power surface mount(3) (2) (1)applications

 3.3. Size:169K  onsemi
mbt3946dw1t1g smbt3946dw1t1g.pdf pdf_icon

MBT3946DW1T2G

MBT3946DW1T1G,SMBT3946DW1T1GComplementary GeneralPurpose TransistorThe MBT3946DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363-6surface mount package. By putting two discrete devices in onepackage, this device is ideal for low-power surface mount

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

Keywords - MBT3946DW1T2G transistor datasheet

 MBT3946DW1T2G cross reference
 MBT3946DW1T2G equivalent finder
 MBT3946DW1T2G lookup
 MBT3946DW1T2G substitution
 MBT3946DW1T2G replacement

 

 
Back to Top

 


 
.