MBT3946DW1T2G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MBT3946DW1T2G
   Código: 46
   Material: Si
   Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 300 MHz
   Capacitancia de salida (Cc): 4 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT-363

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MBT3946DW1T2G Datasheet (PDF)

..1. Size:174K onsemi
mbt3946dw1t2g.pdf

MBT3946DW1T1G,SMBT3946DW1T1GComplementary GeneralPurpose TransistorThe MBT3946DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363-6surface mount package. By putting two discrete devices in onepackage, this device is ideal for low-power surface mount

3.1. Size:174K onsemi
smbt3946dw1t1g mbt3946dw1t1g.pdf

3.2. Size:241K onsemi
mbt3946dw1t1-d.pdf

MBT3946DW1T1GDual General PurposeTransistorThe MBT3946DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT-363-6http://onsemi.comsurface mount package. By putting two discrete devices in onepackage, this device is ideal for low-power surface mount(3) (2) (1)applications

3.3. Size:169K onsemi
mbt3946dw1t1g smbt3946dw1t1g.pdf

3.4. Size:397K willas
mmbt3946dw1t1.pdf

FM120-M WILLAS MMBT3946DW1T1THRUDual General Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toTheM

3.5. Size:664K lrc
lmbt3946dw1t1g lmbt3946dw1t3g.pdf

LMBT3946DW1T1GS-LMBT3946DW1T1GDual General Purpose Transistors PNP/NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.Low VCE(sat), 0.4 VS

3.6. Size:664K lrc
lmbt3946dw1t1g.pdf