Справочник транзисторов. S2000N

 

Биполярный транзистор S2000N - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: S2000N
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 50 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 700 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 8 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 2 MHz
   Ёмкость коллекторного перехода (Cc): 95 pf
   Статический коэффициент передачи тока (hfe): 4.5
   Корпус транзистора: TO-3PH

 Аналоги (замена) для S2000N

 

 

S2000N Datasheet (PDF)

 ..1. Size:221K  savantic
s2000n.pdf

S2000N
S2000N

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors S2000N DESCRIPTION With TO-3P(H)IS package High voltage,high speed Low collector saturation voltage APPLICATIONS Color TV horizontal output applications Color TV switching regulator applications PINNING PIN DESCRIPTION1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbo

 ..2. Size:118K  inchange semiconductor
s2000n.pdf

S2000N
S2000N

Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000N DESCRIPTION With TO-3P(H)IS package High voltage,high speed Low collector saturation voltage APPLICATIONS Color TV horizontal output applications Color TV switching regulator applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symbol

 9.1. Size:59K  st
s2000afi.pdf

S2000N
S2000N

S2000AFI HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE(U.L. FILE # E81734 (N).APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR3TV21DESCRIPTIONThe S2000AFI is manufactured usingISOWATT218Multiepitaxial Mesa technology for cost-effectivehigh performance and use

 9.2. Size:216K  st
s2000af.pdf

S2000N
S2000N

S2000AFHigh voltage NPN power transistor for standarddefinition CRT displayFeatures State-of-the-art technology: Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirement32 Tigh hFE range at operating collector current1 High ruggednessISOWATT218FX Fully insulated power pac

 9.3. Size:219K  inchange semiconductor
s2000.pdf

S2000N
S2000N

isc Silicon NPN Power Transistor S2000DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applicationsColor TV switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

 9.4. Size:37K  inchange semiconductor
s2000a.pdf

S2000N
S2000N

Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000A DESCRIPTION With TO-3P(H)IS package High voltage ,high speed Low collector saturation voltage APPLICATIONS Color TV horizontal output applications Color TV switching regulator applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symbol

 9.5. Size:64K  inchange semiconductor
s2000a1.pdf

S2000N
S2000N

Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000A1 DESCRIPTION With TO-3PH package High voltage ,high speed Low collector saturation voltage APPLICATIONS Color TV horizontal output applications Color TV switching regulator applications PINNING(See Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 sim

 9.6. Size:117K  inchange semiconductor
s2000afi.pdf

S2000N
S2000N

Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000AFI DESCRIPTION With TO-3P(H)IS package High voltage Fast switching APPLICATIONS Horizontal deflection for color TV PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITION

 9.7. Size:117K  inchange semiconductor
s2000af.pdf

S2000N
S2000N

Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000AF DESCRIPTION With TO-3P(H)IS package High voltage Fast switching APPLICATIONS Horizontal deflection for color TV PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS

Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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