All Transistors. S2000N Datasheet

 

S2000N Datasheet and Replacement


   Type Designator: S2000N
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 700 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 2 MHz
   Collector Capacitance (Cc): 95 pF
   Forward Current Transfer Ratio (hFE), MIN: 4.5
   Noise Figure, dB: -
   Package: TO-3PH
 

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S2000N Datasheet (PDF)

 ..1. Size:221K  savantic
s2000n.pdf pdf_icon

S2000N

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors S2000N DESCRIPTION With TO-3P(H)IS package High voltage,high speed Low collector saturation voltage APPLICATIONS Color TV horizontal output applications Color TV switching regulator applications PINNING PIN DESCRIPTION1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbo

 ..2. Size:118K  inchange semiconductor
s2000n.pdf pdf_icon

S2000N

Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000N DESCRIPTION With TO-3P(H)IS package High voltage,high speed Low collector saturation voltage APPLICATIONS Color TV horizontal output applications Color TV switching regulator applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symbol

 9.1. Size:59K  st
s2000afi.pdf pdf_icon

S2000N

S2000AFI HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE(U.L. FILE # E81734 (N).APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR3TV21DESCRIPTIONThe S2000AFI is manufactured usingISOWATT218Multiepitaxial Mesa technology for cost-effectivehigh performance and use

 9.2. Size:216K  st
s2000af.pdf pdf_icon

S2000N

S2000AFHigh voltage NPN power transistor for standarddefinition CRT displayFeatures State-of-the-art technology: Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirement32 Tigh hFE range at operating collector current1 High ruggednessISOWATT218FX Fully insulated power pac

Datasheet: RT3Y97M , RT3YA7M , RT3YB7M , RTE13LFM , RXT2222A , RXT2907A , S1015 , S1815 , 2SD1047 , S2055N , S2SA1774G , S2SC4617G , S-L2SA2030M3T5G , S-L2SC3837T1G , UD2195 , UMF21N , UMF5N .

History: 2SA1435 | 2SC1815Q | 2SA1409 | S2SA1774G | 2SB1197K-R | ZTX753DCSM

Keywords - S2000N transistor datasheet

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