S2000N Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: S2000N 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 1500 V
Tensión colector-emisor (Vce): 700 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 2 MHz
Capacitancia de salida (Cc): 95 pF
Ganancia de corriente contínua (hFE): 4.5
Encapsulados: TO-3PH
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S2000N datasheet
s2000n.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors S2000N DESCRIPTION With TO-3P(H)IS package High voltage,high speed Low collector saturation voltage APPLICATIONS Color TV horizontal output applications Color TV switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbo
s2000n.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000N DESCRIPTION With TO-3P(H)IS package High voltage,high speed Low collector saturation voltage APPLICATIONS Color TV horizontal output applications Color TV switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbol
s2000afi.pdf
S2000AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N). APPLICATIONS HORIZONTAL DEFLECTION FOR COLOUR 3 TV 2 1 DESCRIPTION The S2000AFI is manufactured using ISOWATT218 Multiepitaxial Mesa technology for cost-effective high performance and use
s2000af.pdf
S2000AF High voltage NPN power transistor for standard definition CRT display Features State-of-the-art technology Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirement 3 2 Tigh hFE range at operating collector current 1 High ruggedness ISOWATT218FX Fully insulated power pac
Otros transistores... RT3Y97M, RT3YA7M, RT3YB7M, RTE13LFM, RXT2222A, RXT2907A, S1015, S1815, 2N2222A, S2055N, S2SA1774G, S2SC4617G, S-L2SA2030M3T5G, S-L2SC3837T1G, UD2195, UMF21N, UMF5N
Parámetros del transistor bipolar y su interrelación.
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