DTA114E seriesDatasheetPNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC-50VIC(MAX.)-100mA R110kDTA114EM DTA114EEBR2 (SC-105AA) (SC-89)10k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 10k 2) Built-in bias resistors enable the configuration

DTA114EM / DTA114EE / DTA114EUA Transistors DTA114EKA / DTA114ESA -100mA / -50V Digital transistors (with built-in resistors) DTA114EM / DTA114EE / DTA114EUA / DTA114EKA / DTA114ESA Applications Inverter, Interface, Driver Features1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit)

DDTA (R1 = R2 SERIES) KA PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SC-59 A Complementary NPN Types Available (DDTC) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) B 1.50 1.70 "Green" Device, Note 3 and 4 B CC 2.70 3.00 Mechanical Data D 0.95

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D114PDTA114EKPNP resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 Jul 04File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114EKFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplific

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D114PDTA114EKPNP resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 Jul 04File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114EKFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplific

CHENMKO ENTERPRISE CO.,LTDCHDTA114EKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabili