All Transistors. DTA114EKAFRA Datasheet

 

DTA114EKAFRA Datasheet, Equivalent, Cross Reference Search


   Type Designator: DTA114EKAFRA
   SMD Transistor Code: 14
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT-346

 DTA114EKAFRA Transistor Equivalent Substitute - Cross-Reference Search

   

DTA114EKAFRA Datasheet (PDF)

 ..1. Size:3896K  rohm
dta114eefra dta114ekafra dta114emfha dta114euafra.pdf

DTA114EKAFRA DTA114EKAFRA

DTA114E seriesDatasheetPNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC-50VIC(MAX.)-100mA R110kDTA114EM DTA114EEBR2 (SC-105AA) (SC-89)10k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 10k 2) Built-in bias resistors enable the configuration

 5.1. Size:60K  rohm
dta114eka dta114esa dta114eua.pdf

DTA114EKAFRA DTA114EKAFRA

DTA114EM / DTA114EE / DTA114EUA Transistors DTA114EKA / DTA114ESA -100mA / -50V Digital transistors (with built-in resistors) DTA114EM / DTA114EE / DTA114EUA / DTA114EKA / DTA114ESA Applications Inverter, Interface, Driver Features1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit)

 5.2. Size:181K  diodes
ddta114eka.pdf

DTA114EKAFRA DTA114EKAFRA

DDTA (R1 = R2 SERIES) KA PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SC-59 A Complementary NPN Types Available (DDTC) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) B 1.50 1.70 "Green" Device, Note 3 and 4 B CC 2.70 3.00 Mechanical Data D 0.95

 6.1. Size:57K  motorola
pdta114ek 2.pdf

DTA114EKAFRA DTA114EKAFRA

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D114PDTA114EKPNP resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 Jul 04File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114EKFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplific

 6.2. Size:57K  philips
pdta114ek 2.pdf

DTA114EKAFRA DTA114EKAFRA

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D114PDTA114EKPNP resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 Jul 04File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114EKFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplific

 6.3. Size:75K  chenmko
chdta114ekgp.pdf

DTA114EKAFRA DTA114EKAFRA

CHENMKO ENTERPRISE CO.,LTDCHDTA114EKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabili

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SC1088B

 

 
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