Биполярный транзистор MMUN2213LT1G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MMUN2213LT1G
Маркировка: A8C
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 47 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.246 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: SOT-23
Аналоги (замена) для MMUN2213LT1G
MMUN2213LT1G Datasheet (PDF)
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MMUN2211LT1G Series,SMMUN2211LT1G Series,NSVMMUN2232LT1GBias Resistor TransistorNPN Silicon Surface Mount Transistorhttp://onsemi.comwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlePIN 3device and its external resistor bias network. The BRT (Bias Resistor COLLECTORR1 (OUTPUT)Transistor) contains a single transistor
mmun2211lt1 mmun2212lt1 mmun2213lt1 mmun2214lt1 mmun2215lt1 mmun2216lt1 mmun2230lt1 mmun2231lt1 mmun2232lt1 mmun2233lt1 mmun2234lt1.pdf
Lead FreeRoHS CompliantMEI
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MMUN2211LT1G SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two resistors; a series
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MUN2214, MMUN2214L,MUN5214, DTC114YE,DTC114YM3, NSBC114YF3Digital Transistors (BRT)R1 = 10 kW, R2 = 47 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT
mmun2217l mmun2217lt1g.pdf
MMUN2217L,NSVMMUN2217LDigital Transistors (BRT)R1 = 4.7 kW, R2 = 10 kWNPN Transistors with Monolithic Biashttp://onsemi.comResistor NetworkPIN CONNECTIONSThis series of digital transistors is designed to replace a singlePIN 3device and its external resistor bias network. The Bias ResistorCOLLECTORTransistor (BRT) contains a single transistor with a monolithic bias (OUTPU
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MUN2212, MMUN2212L,MUN5212, DTC124EE,DTC124EM3, NSBC124EF3Digital Transistors (BRT)R1 = 22 kW, R2 = 22 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (
mmun2211.pdf
MMUN2211 SeriesCOLLECTOR3Bias Resistor Transistor3BASE R1NPN Silicon1R212P b Lead(Pb)-Free2EMITTERSOT-23MAXIMUM RATINGSRating SymbolValue Unit50 VdcCollector-Emitter Voltage VCEOCollector-Base Voltage 50 VdcVCBOCollector Current-Continuous I 100 mAdcCTHERMAL CHARACTERISTICSCharacteristics Symbol Value UnitTotal Device Dissipation FR-5 Board (1
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NPN Silicon Epitaxial Planar Transistorfor switching and interface circuit and drive circuit applications Resistor ValuesType R1 (K) R2 (K) MMUN2211 10 10 1.Base 2.Emitter 3.Collector MMUN2212 22 22 SOT-23 Plastic PackageMMUN2213 47 47 MMUN2214 10 47 Collector MMUN2215 10 (Output) MMUN2216 4.7 R1 Base (Input) MMUN2230 1 1 R2MMUN2231 2.2 2.2 Emi
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SC3771-3 | 2SC3889A | 2SA1736
History: 2SC3771-3 | 2SC3889A | 2SA1736
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050