MMUN2213LT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: MMUN2213LT1G
SMD Transistor Code: A8C
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.246
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT-23
MMUN2213LT1G Transistor Equivalent Substitute - Cross-Reference Search
MMUN2213LT1G Datasheet (PDF)
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Lead FreeRoHS CompliantMEI
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MMUN2211 SeriesCOLLECTOR3Bias Resistor Transistor3BASE R1NPN Silicon1R212P b Lead(Pb)-Free2EMITTERSOT-23MAXIMUM RATINGSRating SymbolValue Unit50 VdcCollector-Emitter Voltage VCEOCollector-Base Voltage 50 VdcVCBOCollector Current-Continuous I 100 mAdcCTHERMAL CHARACTERISTICSCharacteristics Symbol Value UnitTotal Device Dissipation FR-5 Board (1
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NPN Silicon Epitaxial Planar Transistorfor switching and interface circuit and drive circuit applications Resistor ValuesType R1 (K) R2 (K) MMUN2211 10 10 1.Base 2.Emitter 3.Collector MMUN2212 22 22 SOT-23 Plastic PackageMMUN2213 47 47 MMUN2214 10 47 Collector MMUN2215 10 (Output) MMUN2216 4.7 R1 Base (Input) MMUN2230 1 1 R2MMUN2231 2.2 2.2 Emi
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
