2N3772J - описание и поиск аналогов

 

2N3772J - Аналоги. Основные параметры


   Наименование производителя: 2N3772J
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 150 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 20 A
   Предельная температура PN-перехода (Tj): 200 °C
   Граничная частота коэффициента передачи тока (ft): 0.2 MHz
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: TO-3

 Аналоги (замена) для 2N3772J

   - подбор ⓘ биполярного транзистора по параметрам

 

2N3772J - технические параметры

 ..1. Size:204K  inchange semiconductor
2n3772j.pdfpdf_icon

2N3772J

isc Silicon NPN Power Transistor 2N3772J DESCRIPTION J High DC Current Gain-h 100-150@I = 10A FE C Low Saturation Voltage- V )= 1.4V(Max)@ I = 10A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(T

 8.1. Size:44K  st
2n3771 2n3772.pdfpdf_icon

2N3772J

2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N3771

 8.2. Size:85K  onsemi
2n3771 2n3772.pdfpdf_icon

2N3772J

2N3771, 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features http //onsemi.com Forward Biased Second Breakdown Current Capability 20 and 30 AMPERE IS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 POWER TRANSISTO

 8.3. Size:86K  onsemi
2n3772g.pdfpdf_icon

2N3772J

2N3771, 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features http //onsemi.com Forward Biased Second Breakdown Current Capability 20 and 30 AMPERE IS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 POWER TRANSISTO

Другие транзисторы... UN511V , UN511Z , FJP5027R , FJP5027O , ZDT690 , ZDT705 , ZDT758 , 2N3171H , 9014 , 2NC5566 , 2SA1012D , 2SC5200H , 2SD1286-Z , 2SD1804L-T , 2SD2901 , 2ST501T , 3CD9A .

 

 
Back to Top

 


 
.