Справочник транзисторов. 2N3772J

 

Биполярный транзистор 2N3772J - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2N3772J
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 150 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 20 A
   Предельная температура PN-перехода (Tj): 200 °C
   Граничная частота коэффициента передачи тока (ft): 0.2 MHz
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: TO-3

 Аналоги (замена) для 2N3772J

 

 

2N3772J Datasheet (PDF)

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2n3772j.pdf

2N3772J
2N3772J

isc Silicon NPN Power Transistor 2N3772JDESCRIPTIONJ:High DC Current Gain-h :100-150@I = 10AFE CLow Saturation Voltage-: V )= 1.4V(Max)@ I = 10ACE(sat CMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for linear amplifiers, series pass regulators, andinductive switching applications.ABSOLUTE MAXIMUM RATINGS(T

 8.1. Size:44K  st
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2N37712N3772HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERREDSALESTYPESDESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-baseNPN transistors mounted in Jedec Jedec TO-3metal case. They are intended for linearamplifiers and inductive switching applications.12TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit2N3771

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2N3771, 2N37722N3771 is a Preferred DeviceHigh Power NPN SiliconPower TransistorsThese devices are designed for linear amplifiers, series passregulators, and inductive switching applications.Featureshttp://onsemi.com Forward Biased Second Breakdown Current Capability20 and 30 AMPEREIS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 POWER TRANSISTO

 8.3. Size:86K  onsemi
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2N3772J
2N3772J

2N3771, 2N37722N3771 is a Preferred DeviceHigh Power NPN SiliconPower TransistorsThese devices are designed for linear amplifiers, series passregulators, and inductive switching applications.Featureshttp://onsemi.com Forward Biased Second Breakdown Current Capability20 and 30 AMPEREIS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 POWER TRANSISTO

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2N3772J
2N3772J

UNISONIC TECHNOLOGIES CO., LTD 2N3772 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS DESCRIPTION The UTC 2N3772 is a silicon power transistor in TO-3 metal case. It is designed for linear amplifiers, series pass regulators, and inductive switching applications. 1TO-3 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N3

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2N3772J
2N3772J

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company2N3772NPN SILICON PLANAR POWER TRANSISTORTO-3Metal Can PackageDesigned for Linear Amplifiers, Series Pass Regulators, and Inductive Switching Applications.ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL UNITSVALUECollector Base Voltage VCBO V100Collector Emitter Voltage VCEO V60Colle

 8.6. Size:167K  cn sptech
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2N3772J
2N3772J

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2N3772DESCRIPTIONExcellent Safe Operating AreaHigh DC Current Gain-h =15(Min)@I = 10AFE CLow Saturation Voltage-: V )= 1.4V(Max)@ I = 10ACE(sat CAPPLICATIONSDesigned for linear amplifiers, series pass regulators, andinductive switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

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2N3772J
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isc Silicon NPN Power Transistor 2N3772DESCRIPTIONExcellent Safe Operating AreaHigh DC Current Gain-h =15(Min)@I = 10AFE CLow Saturation Voltage-: V )= 1.4V(Max)@ I = 10ACE(sat C100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for linear amplifiers, series pass regulators, andinducti

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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