All Transistors. 2N3772J Datasheet

 

2N3772J Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N3772J
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 0.2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO-3

 2N3772J Transistor Equivalent Substitute - Cross-Reference Search

   

2N3772J Datasheet (PDF)

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2n3772j.pdf

2N3772J 2N3772J

isc Silicon NPN Power Transistor 2N3772JDESCRIPTIONJ:High DC Current Gain-h :100-150@I = 10AFE CLow Saturation Voltage-: V )= 1.4V(Max)@ I = 10ACE(sat CMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for linear amplifiers, series pass regulators, andinductive switching applications.ABSOLUTE MAXIMUM RATINGS(T

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2N3772J 2N3772J

2N37712N3772HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERREDSALESTYPESDESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-baseNPN transistors mounted in Jedec Jedec TO-3metal case. They are intended for linearamplifiers and inductive switching applications.12TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit2N3771

 8.2. Size:85K  onsemi
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2N3772J 2N3772J

2N3771, 2N37722N3771 is a Preferred DeviceHigh Power NPN SiliconPower TransistorsThese devices are designed for linear amplifiers, series passregulators, and inductive switching applications.Featureshttp://onsemi.com Forward Biased Second Breakdown Current Capability20 and 30 AMPEREIS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 POWER TRANSISTO

 8.3. Size:86K  onsemi
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2N3772J 2N3772J

2N3771, 2N37722N3771 is a Preferred DeviceHigh Power NPN SiliconPower TransistorsThese devices are designed for linear amplifiers, series passregulators, and inductive switching applications.Featureshttp://onsemi.com Forward Biased Second Breakdown Current Capability20 and 30 AMPEREIS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 POWER TRANSISTO

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2N3772J 2N3772J

UNISONIC TECHNOLOGIES CO., LTD 2N3772 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS DESCRIPTION The UTC 2N3772 is a silicon power transistor in TO-3 metal case. It is designed for linear amplifiers, series pass regulators, and inductive switching applications. 1TO-3 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N3

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2N3772J 2N3772J

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company2N3772NPN SILICON PLANAR POWER TRANSISTORTO-3Metal Can PackageDesigned for Linear Amplifiers, Series Pass Regulators, and Inductive Switching Applications.ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL UNITSVALUECollector Base Voltage VCBO V100Collector Emitter Voltage VCEO V60Colle

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2N3772J 2N3772J

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2N3772DESCRIPTIONExcellent Safe Operating AreaHigh DC Current Gain-h =15(Min)@I = 10AFE CLow Saturation Voltage-: V )= 1.4V(Max)@ I = 10ACE(sat CAPPLICATIONSDesigned for linear amplifiers, series pass regulators, andinductive switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

 8.7. Size:195K  inchange semiconductor
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2N3772J 2N3772J

isc Silicon NPN Power Transistor 2N3772DESCRIPTIONExcellent Safe Operating AreaHigh DC Current Gain-h =15(Min)@I = 10AFE CLow Saturation Voltage-: V )= 1.4V(Max)@ I = 10ACE(sat C100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for linear amplifiers, series pass regulators, andinducti

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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