2N3772J Datasheet. Specs and Replacement

Type Designator: 2N3772J  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 0.2 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO-3

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2N3772J datasheet

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2N3772J

isc Silicon NPN Power Transistor 2N3772J DESCRIPTION J High DC Current Gain-h 100-150@I = 10A FE C Low Saturation Voltage- V )= 1.4V(Max)@ I = 10A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒

 8.1. Size:44K  st

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2N3772J

2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N3771... See More ⇒

 8.2. Size:85K  onsemi

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2N3772J

2N3771, 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features http //onsemi.com Forward Biased Second Breakdown Current Capability 20 and 30 AMPERE IS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 POWER TRANSISTO... See More ⇒

 8.3. Size:86K  onsemi

2n3772g.pdf pdf_icon

2N3772J

2N3771, 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features http //onsemi.com Forward Biased Second Breakdown Current Capability 20 and 30 AMPERE IS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 POWER TRANSISTO... See More ⇒

Detailed specifications: UN511V, UN511Z, FJP5027R, FJP5027O, ZDT690, ZDT705, ZDT758, 2N3171H, 9014, 2NC5566, 2SA1012D, 2SC5200H, 2SD1286-Z, 2SD1804L-T, 2SD2901, 2ST501T, 3CD9A

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