Справочник транзисторов. BUW11W

 

Биполярный транзистор BUW11W - описание производителя. Основные параметры. Даташиты.

Наименование производителя: BUW11W

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 100 W

Макcимально допустимое напряжение коллектор-база (Ucb): 850 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V

Макcимальный постоянный ток коллектора (Ic): 5 A

Предельная температура PN-перехода (Tj): 150 °C

Статический коэффициент передачи тока (hfe): 10

Корпус транзистора: TO247, SOT429

Аналоги (замена) для BUW11W

 

 

BUW11W Datasheet (PDF)

1.1. buw11w buw11aw.pdf Size:79K _update_bjt

BUW11W
BUW11W

DISCRETE SEMICONDUCTORS DATA SHEET BUW11W; BUW11AW Silicon diffused power transistors 1997 Aug 14 Product specification File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW11W; BUW11AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. e APPLICATIONS • Converte

1.2. buw11w buw11aw.pdf Size:79K _philips

BUW11W
BUW11W

DISCRETE SEMICONDUCTORS DATA SHEET BUW11W; BUW11AW Silicon diffused power transistors 1997 Aug 14 Product specification File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW11W; BUW11AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. e APPLICATIONS • Converte

 1.3. buw11w buw11aw 1.pdf Size:79K _philips

BUW11W
BUW11W

DISCRETE SEMICONDUCTORS DATA SHEET BUW11W; BUW11AW Silicon diffused power transistors 1997 Aug 14 Product specification File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW11W; BUW11AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. e APPLICATIONS • Converte

1.4. buw11w.pdf Size:212K _inchange_semiconductor

BUW11W
BUW11W

isc Silicon NPN Power Transistor BUW11W DESCRIPTION ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 850 V CBO V Collector-Emitter

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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