BUW11W Todos los transistores

 

BUW11W . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUW11W
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 850 V
   Tensión colector-emisor (Vce): 400 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO247 SOT429
     - Selección de transistores por parámetros

 

BUW11W Datasheet (PDF)

 ..1. Size:79K  philips
buw11w buw11aw 1.pdf pdf_icon

BUW11W

DISCRETE SEMICONDUCTORSDATA SHEETBUW11W; BUW11AWSilicon diffused power transistors1997 Aug 14Product specificationFile under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BUW11W; BUW11AWDESCRIPTIONHigh-voltage, high-speed,glass-passivated NPN powertransistor in a SOT429 package.eAPPLICATIONS Converte

 ..2. Size:79K  philips
buw11w buw11aw.pdf pdf_icon

BUW11W

DISCRETE SEMICONDUCTORSDATA SHEETBUW11W; BUW11AWSilicon diffused power transistors1997 Aug 14Product specificationFile under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BUW11W; BUW11AWDESCRIPTIONHigh-voltage, high-speed,glass-passivated NPN powertransistor in a SOT429 package.eAPPLICATIONS Converte

 ..3. Size:212K  inchange semiconductor
buw11w.pdf pdf_icon

BUW11W

isc Silicon NPN Power Transistor BUW11WDESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSConvertersInvertersSwitching regulatorsMotor control systemsABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 850 VCBOV Collector-Emitter

 9.1. Size:72K  philips
buw11f 1.pdf pdf_icon

BUW11W

DISCRETE SEMICONDUCTORSDATA SHEETBUW11F; BUW11AFSilicon diffused power transistors1997 Aug 14Product specificationSupersedes data of February 1996File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BUW11F; BUW11AFDESCRIPTIONHigh-voltage, high-speed,ook, halfpageglass-passivated NPN powertransistor in

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2SB136 | AC125R | 2N2287 | 2SC1083 | 2N5872A | 2SB446 | BLW35

 

 
Back to Top

 


 
.