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BUW11W . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUW11W

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 850 V

Tensión colector-emisor (Vce): 400 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 10

Empaquetado / Estuche: TO247, SOT429

Búsqueda de reemplazo de transistor bipolar BUW11W

 

BUW11W Datasheet (PDF)

1.1. buw11w buw11aw.pdf Size:79K _update_bjt

BUW11W
BUW11W

DISCRETE SEMICONDUCTORS DATA SHEET BUW11W; BUW11AW Silicon diffused power transistors 1997 Aug 14 Product specification File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW11W; BUW11AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. e APPLICATIONS • Converte

1.2. buw11w buw11aw.pdf Size:79K _philips

BUW11W
BUW11W

DISCRETE SEMICONDUCTORS DATA SHEET BUW11W; BUW11AW Silicon diffused power transistors 1997 Aug 14 Product specification File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW11W; BUW11AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. e APPLICATIONS • Converte

 1.3. buw11w buw11aw 1.pdf Size:79K _philips

BUW11W
BUW11W

DISCRETE SEMICONDUCTORS DATA SHEET BUW11W; BUW11AW Silicon diffused power transistors 1997 Aug 14 Product specification File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW11W; BUW11AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. e APPLICATIONS • Converte

1.4. buw11w.pdf Size:212K _inchange_semiconductor

BUW11W
BUW11W

isc Silicon NPN Power Transistor BUW11W DESCRIPTION ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 850 V CBO V Collector-Emitter

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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