BUW11W Datasheet. Specs and Replacement

Type Designator: BUW11W  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 850 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO247 SOT429

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BUW11W datasheet

 ..1. Size:79K  philips

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BUW11W

DISCRETE SEMICONDUCTORS DATA SHEET BUW11W; BUW11AW Silicon diffused power transistors 1997 Aug 14 Product specification File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW11W; BUW11AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. e APPLICATIONS Converte... See More ⇒

 ..2. Size:79K  philips

buw11w buw11aw.pdf pdf_icon

BUW11W

DISCRETE SEMICONDUCTORS DATA SHEET BUW11W; BUW11AW Silicon diffused power transistors 1997 Aug 14 Product specification File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW11W; BUW11AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. e APPLICATIONS Converte... See More ⇒

 ..3. Size:212K  inchange semiconductor

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BUW11W

isc Silicon NPN Power Transistor BUW11W DESCRIPTION High Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 850 V CBO V Collector-Emitter ... See More ⇒

 9.1. Size:72K  philips

buw11f 1.pdf pdf_icon

BUW11W

DISCRETE SEMICONDUCTORS DATA SHEET BUW11F; BUW11AF Silicon diffused power transistors 1997 Aug 14 Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW11F; BUW11AF DESCRIPTION High-voltage, high-speed, ook, halfpage glass-passivated NPN power transistor in... See More ⇒

Detailed specifications: BU2532AL, BU2532AW, BU2708AF, BU2708AX, BU406FI, BUT11AI, BUV48BFI, BUW11AW, 2N5401, BUW12AW, BUW12W, BUX18A, BUX47AFI, KSD880W, KTC2200, KTC2202, KTD1945

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