Биполярный транзистор BU941ZL - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BU941ZL
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 155 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 350 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 15 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 300
Корпус транзистора: TO-3PN
BU941ZL Datasheet (PDF)
1.1. bu941zl bu941zg.pdf Size:286K _1
UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION 1 TO-3P COIL DRIVER FEATURES 1 TO-220 * NPN Darlington * Integrated antiparallel collector-emitter diode APPLICATIONS 1 * High ruggedness electric ignitions TO-263 INTERNAL SCHEMATIC DIAGRAM (2) C B(1) (3) E ORDERING INFORMATION Ordering Number
1.2. bu941zle3.pdf Size:247K _cystek
Spec. No. : C660E3 Issued Date : 2014.01.09 CYStech Electronics Corp. Revised Date : Page No. : 1/6 NPN Epitaxial Planar Transistor BVCEO 350V BU941ZLE3 IC 15A VCESAT(MAX) 1.6V Features •High BVCEO •Low VCE(SAT) •High current capability •Built-in clamping zener •Pb-free lead plating package Applications •High ruggedness electronic ignitions Equivalent
4.1. bu941zt bu941ztfp bub941zt.pdf Size:89K _st
BU941ZT/BU941ZTFP BUB941ZT HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263) 3 3 POWER PACKAGE IN TUBE (NO SUFFIX) 2 2 OR IN TAPE & REEL (SUFFIX ”T4”) 1 1 TO-220 TO-220FP APPLICATIONS HIGH RUGGEDNESS ELECTRONIC I
4.2. bu941ztfp-zt bub941zt.pdf Size:413K _st
BU941ZT/BU941ZTFP BUB941ZT ® HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263) 3 3 POWER PACKAGE IN TUBE (NO SUFFIX) 2 2 OR IN TAPE & REEL (SUFFIX "T4") 1 1 TO-220 TO-220FP APPLICATIONS HIGH RUGGEDNESS ELECTRONIC IGNITI
4.3. bu941zfp.pdf Size:220K _cystek
Spec. No. : C660FP Issued Date : 2008.05.20 CYStech Electronics Corp. Revised Date : Page No. : 1/5 NPN Epitaxial Planar Transistor BU941ZFP Features •High BVCEO •Low VCE(SAT) •High current capability •Built-in clamping zener •Pb-free package Applications •High ruggedness electronic ignitions Equivalent Circuit Outline BU941ZFP TO-220FP C B E B
4.4. bu941ze3.pdf Size:221K _cystek
Spec. No. : C660E3 Issued Date : 2010.02.03 CYStech Electronics Corp. Revised Date : Page No. : 1/5 NPN Epitaxial Planar Transistor BVCEO 350V BU941ZE3 IC 15A RCESAT(MAX) 0.18Ω Features •High BVCEO •Low VCE(SAT) •High current capability •Built-in clamping zener •Pb-free lead plating package Applications •High ruggedness electronic ignitions Equivale
4.5. bu941zp3.pdf Size:243K _cystek
Spec. No. : C660P3 Issued Date : 2008.07.22 CYStech Electronics Corp. Revised Date :2011.01.04 Page No. : 1/5 NPN Epitaxial Planar Transistor BVCEO 350V IC 15A BU941ZP3 VCESAT(MAX) 2V @12A Features •High BVCEO •Low VCE(SAT) •High current capability •Built-in clamping zener •Pb-free lead plating package Applications •High ruggedness electronic ignitions
4.6. bu941zf3.pdf Size:242K _cystek
Spec. No. : C660F3 Issued Date : 2010.10.01 CYStech Electronics Corp. Revised Date : 2014.02.13 Page No. : 1/6 NPN Epitaxial Planar Transistor BU941ZF3 Features •High BVCEO •Low VCE(SAT) •High current capability •Built-in clamping zener •Pb-free lead plating package Applications •High ruggedness electronic ignitions Equivalent Circuit Outline TO-263
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .