All Transistors. BU941ZL Datasheet

 

BU941ZL Datasheet, Equivalent, Cross Reference Search

Type Designator: BU941ZL

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 155 W

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 300

Noise Figure, dB: -

Package: TO-3PN

BU941ZL Transistor Equivalent Substitute - Cross-Reference Search

 

BU941ZL Datasheet (PDF)

0.1. bu941zl bu941zg.pdf Size:286K _1

BU941ZL
BU941ZL

UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION 1 TO-3P COIL DRIVER  FEATURES 1 TO-220 * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS 1 * High ruggedness electric ignitions TO-263  INTERNAL SCHEMATIC DIAGRAM (2) C B(1) (3) E  ORDERING INFORMATION Ordering Number

0.2. bu941zle3.pdf Size:247K _cystek

BU941ZL
BU941ZL

Spec. No. : C660E3 Issued Date : 2014.01.09 CYStech Electronics Corp. Revised Date : Page No. : 1/6 NPN Epitaxial Planar Transistor BVCEO 350V BU941ZLE3 IC 15A VCESAT(MAX) 1.6V Features •High BVCEO •Low VCE(SAT) •High current capability •Built-in clamping zener •Pb-free lead plating package Applications •High ruggedness electronic ignitions Equivalent

 0.3. bu941zl.pdf Size:235K _inchange_semiconductor

BU941ZL
BU941ZL

isc Silicon NPN Darlington Power Transistor BU941ZL DESCRIPTION ·Built In Clamping Zener ·High Operating Junction Temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electric ignitions ABSOLUTE MAXIMUM RATINGS(TB B=25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Emitter Voltage 350 V CEO VB Emitter-Base

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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