Справочник транзисторов. 3DD1555

 

Биполярный транзистор 3DD1555 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 3DD1555

Маркировка: D1555

Тип материала: Si

Полярность: NPN

Встроенный резистор цепи смещения R2 = 0.05 kOhm

Максимальная рассеиваемая мощность (Pc): 50 W

Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 600 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 5 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 1 MHz

Статический коэффициент передачи тока (hfe): 5

Корпус транзистора: TO3P

Аналоги (замена) для 3DD1555

 

 

3DD1555 Datasheet (PDF)

0.1. 3dd1555.pdf Size:146K _1

3DD1555
3DD1555

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY R3DD1555 Package MAIN CHARACTERISTICS TO-3P(H)IS 1500 V BV CBO5 A I C5 V(max) V CE(sat)t 1 s(max) f APPLICATIONS Horizontal deflection output for color TV. 1 2 3 FEATURES

8.1. 3dd155.pdf Size:152K _china

3DD1555

3DD155 NPN A B C D E F G PCM TC=75 20 W ICM 2 A Tjm 175 Tstg -55~150 VCE=10V Rth 5 /W IC=0.5A V(BR)CBO ICB=1mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=1mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=0.5mA 5.0 V ICBO VCB

 9.1. 3dd157.pdf Size:153K _china

3DD1555

3DD157 NPN A B C D E F G PCM TC=75 30 W ICM 3 A Tjm 175 Tstg -55~150 VCE=10V Rth 3.3 /W IC=1A V(BR)CBO ICB=3mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=3mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=5

9.2. 3dd159.pdf Size:153K _china

3DD1555

3DD159 NPN A B C D E F G PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=3mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=3mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=5

 9.3. 3dd151.pdf Size:152K _china

3DD1555

3DD151 NPN A B C D E F G PCM TC=75 5 W ICM 1 A Tjm 175 Tstg -55~150 VCE=10V Rth 20 /W IC=0.1A V(BR)CBO ICB=1mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=1mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB

9.4. 3dd15.pdf Size:119K _china

3DD1555

3DD15 NPN A B C D E F PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2.0 /W IC=1A V(BR)CBO ICB5mA 60 150 200 300 400 500 V V(BR)CEO ICE5mA 60 100 120 200 300 350 V V(BR)EBO IEB5mA 4.0 V ICBO VCB=50V

 9.5. 3dd153.pdf Size:152K _china

3DD1555

3DD153 NPN A B C D E F G PCM TC=75 10 W ICM 1.5 A Tjm 175 Tstg -55~150 VCE=10V Rth 10 /W IC=0.2A V(BR)CBO ICB=1mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=1mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=0.5mA 5.0 V ICBO

9.6. 3dd159e.pdf Size:192K _inchange_semiconductor

3DD1555
3DD1555

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD159EDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

9.7. 3dd15b.pdf Size:206K _inchange_semiconductor

3DD1555
3DD1555

isc Silicon NPN Power Transistor 3DD15BDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEODC Current Gain-: h = 30~250(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 1.5V(Max)@ I = 2.5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B&W TV horizontal output , r

9.8. 3dd159f.pdf Size:192K _inchange_semiconductor

3DD1555
3DD1555

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD159FDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

9.9. 3dd159c.pdf Size:192K _inchange_semiconductor

3DD1555
3DD1555

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD159CDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

9.10. 3dd159b.pdf Size:192K _inchange_semiconductor

3DD1555
3DD1555

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD159BDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

9.11. 3dd15.pdf Size:204K _inchange_semiconductor

3DD1555
3DD1555

isc Silicon NPN Power Transistor 3DD15DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEODC Current Gain-: h = 30~250(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 1.5V(Max)@ I = 2.5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B&W TV horizontal output , reg

9.12. 3dd159d.pdf Size:192K _inchange_semiconductor

3DD1555
3DD1555

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD159DDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

9.13. 3dd159a.pdf Size:183K _inchange_semiconductor

3DD1555
3DD1555

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD159ADESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

9.14. 3dd15d.pdf Size:206K _inchange_semiconductor

3DD1555
3DD1555

isc Silicon NPN Power Transistor 3DD15DDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min.)(BR)CEODC Current Gain-: h = 30~250(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 1.5V(Max)@ I = 2.5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B&W TV horizontal output , r

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