3DD1555 Datasheet. Specs and Replacement
Type Designator: 3DD1555 📄📄
SMD Transistor Code: D1555
Material of Transistor: Si
Polarity: NPN
Built in Bias Resistor R2 = 0.05 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO3P
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3DD1555 datasheet
..1. Size:146K 1
3dd1555.pdf 
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY R 3DD1555 Package MAIN CHARACTERISTICS TO-3P(H)IS 1500 V BV CBO 5 A I C 5 V(max) V CE(sat) t 1 s(max) f APPLICATIONS Horizontal deflection output for color TV. 1 2 3 FEATURES ... See More ⇒
8.1. Size:152K china
3dd155.pdf
3DD155 NPN A B C D E F G PCM TC=75 20 W ICM 2 A Tjm 175 Tstg -55 150 VCE=10V Rth 5 /W IC=0.5A V(BR)CBO ICB=1mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=1mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=0.5mA 5.0 V ICBO VCB... See More ⇒
8.2. Size:256K inchange semiconductor
3dd155.pdf
isc Silicon NPN Power Transistor 3DD155 DESCRIPTION DC Current Gain h = 15-120@I = 1A FE C Collector-Emitter Saturation Voltage V )= 1.0V(Max)@ I = 1A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B&W TV horizontal output , regulated power supply and power amplifier applications. ABSOLUTE MAXIMUM RA... See More ⇒
9.1. Size:153K china
3dd157.pdf
3DD157 NPN A B C D E F G PCM TC=75 30 W ICM 3 A Tjm 175 Tstg -55 150 VCE=10V Rth 3.3 /W IC=1A V(BR)CBO ICB=3mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=3mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=5... See More ⇒
9.2. Size:152K china
3dd153.pdf
3DD153 NPN A B C D E F G PCM TC=75 10 W ICM 1.5 A Tjm 175 Tstg -55 150 VCE=10V Rth 10 /W IC=0.2A V(BR)CBO ICB=1mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=1mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=0.5mA 5.0 V ICBO ... See More ⇒
9.3. Size:119K china
3dd15.pdf
3DD15 NPN A B C D E F PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55 150 VCE=10V Rth 2.0 /W IC=1A V(BR)CBO ICB 5mA 60 150 200 300 400 500 V V(BR)CEO ICE 5mA 60 100 120 200 300 350 V V(BR)EBO IEB 5mA 4.0 V ICBO VCB=50V ... See More ⇒
9.4. Size:153K china
3dd159.pdf
3DD159 NPN A B C D E F G PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55 150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=3mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=3mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=5... See More ⇒
9.5. Size:152K china
3dd151.pdf
3DD151 NPN A B C D E F G PCM TC=75 5 W ICM 1 A Tjm 175 Tstg -55 150 VCE=10V Rth 20 /W IC=0.1A V(BR)CBO ICB=1mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=1mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB... See More ⇒
9.6. Size:192K inchange semiconductor
3dd159f.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD159F DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
9.7. Size:192K inchange semiconductor
3dd159c.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD159C DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
9.8. Size:206K inchange semiconductor
3dd15d.pdf
isc Silicon NPN Power Transistor 3DD15D DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min.) (BR)CEO DC Current Gain- h = 30 250(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 1.5V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B&W TV horizontal output , r... See More ⇒
9.9. Size:204K inchange semiconductor
3dd15.pdf
isc Silicon NPN Power Transistor 3DD15 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO DC Current Gain- h = 30 250(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 1.5V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B&W TV horizontal output , reg... See More ⇒
9.10. Size:183K inchange semiconductor
3dd159a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD159A DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE ... See More ⇒
9.11. Size:192K inchange semiconductor
3dd159d.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD159D DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
9.12. Size:192K inchange semiconductor
3dd159e.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD159E DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
9.13. Size:192K inchange semiconductor
3dd159b.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD159B DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
9.14. Size:206K inchange semiconductor
3dd15b.pdf
isc Silicon NPN Power Transistor 3DD15B DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO DC Current Gain- h = 30 250(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 1.5V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B&W TV horizontal output , r... See More ⇒
Detailed specifications: HLD128D, LM4158D, ST2310HI, ST2310DHI, 3DD13005MD-O-HF-N-B, 3DD13005MD-O-Z-N-C, Q3-2, YZ21D, D667, 3DD13007K, BRMJE172D, 3DD401, XW6821, XW6822, XW6822A, XW6823, XW6823A
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