TIP111G - параметры, поиск аналогов, даташиты транзистора

TIP111G Datasheet (PDF)

..1. Size:307K onsemi
tip110 tip110g tip111 tip111g tip112 tip112g tip115 tip115g tip116 tip116g tip117 tip117g.pdf pdf_icon

TIP110, TIP111, TIP112(NPN); TIP115, TIP116,TIP117 (PNP)Plastic Medium-PowerComplementary Siliconwww.onsemi.comTransistorsDARLINGTONDesigned for general-purpose amplifier and low-speed switchingapplications. 2 AMPERECOMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain -hFE = 2500 (Typ) @ IC 60-80-100 VOLTS, 50 WATTS= 1.0 Adc Collector-Emitt

8.1. Size:228K mcc
tip110 tip111 tip112 to-220.pdf pdf_icon

MCCMicro Commercial ComponentsTMTIP110/111/11220736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features The complementary PNP types are the TIP115/116/117 respectivelySilicon NPN Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information)Darlington Epoxy

8.2. Size:202K lge
tip111.pdf pdf_icon

TIP111 TO-220 Darlington Transistor (NPN)1. BASE TO-2202. COLLECTOR 3. EMITTER 3 21FeaturesHigh DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 80 V Dimensions in inches and (millimeters)V

8.3. Size:213K inchange semiconductor
tip111.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor TIP111DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.5V(Max)@ I = 2ACE(sat) CComplement to Type TIP116Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .