TIP111G Todos los transistores

 

TIP111G Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TIP111G
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 100 pF
   Ganancia de corriente contínua (hfe): 1000
   Paquete / Cubierta: TO220
 

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Principales características: TIP111G

 ..1. Size:307K  onsemi
 tip110 tip110g tip111 tip111g tip112 tip112g tip115 tip115g tip116 tip116g tip117 tip117g.pdf pdf_icon

TIP111G

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) Plastic Medium-Power Complementary Silicon www.onsemi.com Transistors DARLINGTON Designed for general-purpose amplifier and low-speed switching applications. 2 AMPERE COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain - hFE = 2500 (Typ) @ IC 60-80-100 VOLTS, 50 WATTS = 1.0 Adc Collector-Emitt

 8.1. Size:228K  mcc
 tip110 tip111 tip112 to-220.pdf pdf_icon

TIP111G

MCC Micro Commercial Components TM TIP110/111/112 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features The complementary PNP types are the TIP115/116/117 respectively Silicon NPN Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) Darlington Epoxy

 8.2. Size:202K  lge
 tip111.pdf pdf_icon

TIP111G

TIP111 TO-220 Darlington Transistor (NPN) 1. BASE TO-220 2. COLLECTOR 3. EMITTER 3 2 1 Features High DC Current Gain hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V Dimensions in inches and (millimeters) V

 8.3. Size:213K  inchange semiconductor
 tip111.pdf pdf_icon

TIP111G

isc Silicon NPN Darlington Power Transistor TIP111 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 1A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.5V(Max)@ I = 2A CE(sat) C Complement to Type TIP116 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

MOSTRAR MÁS

Otros transistores... SMMBTH10-4L , SNSS30201MR6T1G , SS8550BBU , SS8550CBU , SS8550CTA , SS8550DBU , SS8550DTA , TIP110G , TIP42C , TIP112G , TIP115G , TIP116G , TIP117G , TIP29AG , TIP29BG , TIP29CG , TIP29G .

 

 
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