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TIP111G Specs and Replacement


   Type Designator: TIP111G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 100 pF
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO220

 TIP111G Transistor Equivalent Substitute - Cross-Reference Search

   

TIP111G detailed specifications

 ..1. Size:307K  onsemi
tip110 tip110g tip111 tip111g tip112 tip112g tip115 tip115g tip116 tip116g tip117 tip117g.pdf pdf_icon

TIP111G

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) Plastic Medium-Power Complementary Silicon www.onsemi.com Transistors DARLINGTON Designed for general-purpose amplifier and low-speed switching applications. 2 AMPERE COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain - hFE = 2500 (Typ) @ IC 60-80-100 VOLTS, 50 WATTS = 1.0 Adc Collector-Emitt... See More ⇒

 8.1. Size:228K  mcc
tip110 tip111 tip112 to-220.pdf pdf_icon

TIP111G

MCC Micro Commercial Components TM TIP110/111/112 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features The complementary PNP types are the TIP115/116/117 respectively Silicon NPN Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) Darlington Epoxy... See More ⇒

 8.2. Size:202K  lge
tip111.pdf pdf_icon

TIP111G

TIP111 TO-220 Darlington Transistor (NPN) 1. BASE TO-220 2. COLLECTOR 3. EMITTER 3 2 1 Features High DC Current Gain hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V Dimensions in inches and (millimeters) V... See More ⇒

 8.3. Size:213K  inchange semiconductor
tip111.pdf pdf_icon

TIP111G

isc Silicon NPN Darlington Power Transistor TIP111 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 1A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.5V(Max)@ I = 2A CE(sat) C Complement to Type TIP116 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS... See More ⇒

Detailed specifications: SMMBTH10-4L , SNSS30201MR6T1G , SS8550BBU , SS8550CBU , SS8550CTA , SS8550DBU , SS8550DTA , TIP110G , TIP42C , TIP112G , TIP115G , TIP116G , TIP117G , TIP29AG , TIP29BG , TIP29CG , TIP29G .

History: KT712A | KT716A

Keywords - TIP111G transistor specs

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