All Transistors. TIP111G Datasheet

 

TIP111G Datasheet, Equivalent, Cross Reference Search


   Type Designator: TIP111G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 100 pF
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO220

 TIP111G Transistor Equivalent Substitute - Cross-Reference Search

   

TIP111G Datasheet (PDF)

 ..1. Size:307K  onsemi
tip110 tip110g tip111 tip111g tip112 tip112g tip115 tip115g tip116 tip116g tip117 tip117g.pdf

TIP111G
TIP111G

TIP110, TIP111, TIP112(NPN); TIP115, TIP116,TIP117 (PNP)Plastic Medium-PowerComplementary Siliconwww.onsemi.comTransistorsDARLINGTONDesigned for general-purpose amplifier and low-speed switchingapplications. 2 AMPERECOMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain -hFE = 2500 (Typ) @ IC 60-80-100 VOLTS, 50 WATTS= 1.0 Adc Collector-Emitt

 8.1. Size:228K  mcc
tip110 tip111 tip112 to-220.pdf

TIP111G
TIP111G

MCCMicro Commercial ComponentsTMTIP110/111/11220736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features The complementary PNP types are the TIP115/116/117 respectivelySilicon NPN Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information)Darlington Epoxy

 8.2. Size:202K  lge
tip111.pdf

TIP111G
TIP111G

TIP111 TO-220 Darlington Transistor (NPN)1. BASE TO-2202. COLLECTOR 3. EMITTER 3 21FeaturesHigh DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 80 V Dimensions in inches and (millimeters)V

 8.3. Size:213K  inchange semiconductor
tip111.pdf

TIP111G
TIP111G

isc Silicon NPN Darlington Power Transistor TIP111DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.5V(Max)@ I = 2ACE(sat) CComplement to Type TIP116Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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