Биполярный транзистор TIP116G
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: TIP116G
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 50
W
Макcимально допустимое напряжение коллектор-база (Ucb): 80
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 2
A
Предельная температура PN-перехода (Tj): 150
°C
Ёмкость коллекторного перехода (Cc): 200
pf
Статический коэффициент передачи тока (hfe): 1000
Корпус транзистора:
TO220
- подбор биполярного транзистора по параметрам
TIP116G
Datasheet (PDF)
..1. Size:307K onsemi
tip110 tip110g tip111 tip111g tip112 tip112g tip115 tip115g tip116 tip116g tip117 tip117g.pdf ![pdf_icon](https://alltransistors.com/ad/pdf_icon.gif)
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TIP110, TIP111, TIP112(NPN); TIP115, TIP116,TIP117 (PNP)Plastic Medium-PowerComplementary Siliconwww.onsemi.comTransistorsDARLINGTONDesigned for general-purpose amplifier and low-speed switchingapplications. 2 AMPERECOMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain -hFE = 2500 (Typ) @ IC 60-80-100 VOLTS, 50 WATTS= 1.0 Adc Collector-Emitt
8.1. Size:373K mcc
tip115 tip116 tip117 to-220.pdf ![pdf_icon](https://alltransistors.com/ad/pdf_icon.gif)
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MCCTIP115Micro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsTIP116CA 91311Phone: (818) 701-4933TIP117Fax: (818) 701-4939Features High DC Current Gain : hFE=1000 @ VCE=4.0V, IC=1.0A(Min.) Low Collector-Emitter Saturation VoltagePNP Epitaxial Complementary to TIP110/111/112 Lead Free Finish/RoHS Compliant (Note1) ("
8.2. Size:213K inchange semiconductor
tip116.pdf ![pdf_icon](https://alltransistors.com/ad/pdf_icon.gif)
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isc Silicon PNP Darlington Power Transistor TIP116DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -1AFE CCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.5V(Max)@ I = -2ACE(sat) CComplement to Type TIP111Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICAT
9.1. Size:269K motorola
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Order this documentMOTOROLAby TIP110/DSEMICONDUCTOR TECHNICAL DATAPlastic Medium-PowerNPNTIP110Complementary Silicon Transistors. . . designed for generalpurpose amplifier and lowspeed switching applications.TIP111* High DC Current Gain hFE = 2500 (Typ) @ IC = 1.0 Adc CollectorEmitter Sustaining Voltage @ 30 mAdcTIP112*VCEO(sus) = 60 Vdc (Min)
9.2. Size:243K st
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TIP110/112TIP115/117COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATIONS 32 LINEAR AND SWITCHING INDUSTRIAL1EQUIPMENT TO-220DESCRIPTION The TIP110 and TIP112 are siliconEpitaxial-Base NPN
9.3. Size:84K st
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TIP110/112TIP115/117COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODEAPPLICATIONS LINEAR AND SWITCHING INDUSTRIAL32EQUIPMENT1DESCRIPTIONTO-220The TIP110 and TIP112 are silicon epitaxial-baseNPN transistors in mon
9.4. Size:38K st
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TIP110/112TIP115/117COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORSn SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe TIP110, and TIP112 are siliconepitaxial-base NPN transistors in monolithicDarlington configuration mounted in JedecTO-220 plastic package. They are intented foruse in medium power linear and switchingapplications.32The complementary PNP types are TIP1
9.5. Size:61K samsung
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PNP EPITAXIALTIP115/116/117 SILICON DARLINGTON TRANSISTORHIGH DC CURRENT GAINTO-220MIN h =1000 @ V = -4V, I = -1AFE CE CLOW COLLECTOR-EMITTERSATURATION VOLTAGEMONOLITHIC CONSTRUCTION WITH BUILTIN BASE-EMITTER SHUNT RESISTORSINDUSTRIAL USEComplementary to TIP110/111/112ABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Emitter Voltage :TIP115 VCBO -60
9.6. Size:59K samsung
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NPN EPITAXIALTIP110/111/112 SILICON DARLINGTON TRANSISTORHIGH DC CURRENT GAINTO-220MIN h =1000 @ V =4V, I =1AFE CE CLOW COLLECTOR-EMITTERSATURATION VOLTAGEMONOLITHIC CONSTRUCTION WITH BUILTIN BASE-EMITTER SHUNT RESISTORSINDUSTRIAL USEComplementary to TIP115/116/117ABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Emitter Voltage :TIP110 VCBO 60 V1
9.7. Size:228K mcc
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MCCMicro Commercial ComponentsTMTIP110/111/11220736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features The complementary PNP types are the TIP115/116/117 respectivelySilicon NPN Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information)Darlington Epoxy
9.8. Size:184K utc
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UNISONIC TECHNOLOGIES CO., LTD TIP112 NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR DESCRIPTION The UTC TIP112 is designed for such applications as: DC/DC converters supply line switching, battery charger, LCD backlighting,peripheral drivers, Driver in low supply voltage applications (e.g. lamps and LEDs) and inductive load driver (e.g. relays, buzzers and
9.9. Size:100K utc
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UNISONIC TECHNOLOGIES CO., LTD TIP110A Preliminary PNP SILICON TRANSISTOR LOW SATURATION VOLTAGE PNP DARLINGTON TRANSISTOR DESCRIPTION The UTC TIP110A is designed for using in general purpose amplifier and switching applications. FEATURES * Low VCE(SAT) * High Current Gain ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Fre
9.11. Size:265K cdil
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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPLASTIC POWER TRANSISTORS TIP110 TIP115TIP111 TIP116TIP112 TIP117NPN PNPTO-220Plastic PackageIntended for use in Medium Power Linear and Switching ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL TIP110/115 TIP111/116 TIP112/117 UNITVCEO Collector Emitter Voltage 60
9.12. Size:74K kec
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SEMICONDUCTOR TIP112TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORMONOLITHIC CONSTRUCTION WITH BUILT IN ABASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.RS FEATURESPD High DC Current Gain. DIM MILLIMETERS: hFE=1000(Min.), VCE=4V, IC=1A.A 10.30 MAXB 15.30 MAX Low Collector-Emitter Saturation Voltage.C 0.80_+ Complementary to TIP117. D 3.60 0.20TE 3.00F
9.13. Size:75K kec
tip117.pdf ![pdf_icon](https://alltransistors.com/ad/pdf_icon.gif)
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SEMICONDUCTOR TIP117TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORMONOLITHIC CONSTRUCTION WITH BUILT IN ABASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.RS FEATURESPD High DC Current Gain. DIM MILLIMETERS: hFE=1000(Min.), VCE=-4V, IC=-1A.A 10.30 MAXB 15.30 MAX Low Collector-Emitter Saturation Voltage.C 0.80_+ Complementary to TIP112. D 3.60 0.20TE 3.00
9.14. Size:444K kec
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SEMICONDUCTOR TIP112FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORMONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.ACDIM MILLIMETERSS_FEATURES A 10.0 + 0.3_+B 15.0 0.3EHigh DC Current Gain. C _2.70 0.3+D 0.76+0.09/-0.05: hFE=1000(Min.), VCE=4V, IC=1A._E 3.2 0.2+_F 3.0 0.3+Low Collector-Emitter Saturation Volta
9.15. Size:445K kec
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SEMICONDUCTOR TIP117FTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORMONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.ACDIM MILLIMETERSS_FEATURES A 10.0 + 0.3_+B 15.0 0.3EHigh DC Current Gain. C _2.70 0.3+D 0.76+0.09/-0.05: hFE=1000(Min.), VCE=-4V, IC=-1A._E 3.2 0.2+_F 3.0 0.3+Low Collector-Emitter Saturation Vol
9.16. Size:208K lge
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TIP112 TO-220 Darlington Transistor (NPN)TO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 100 V VCE
9.17. Size:226K lge
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TIP110 TO-220 Darlington Transistor (NPN)TO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 60 V VCEO Co
9.18. Size:202K lge
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TIP111 TO-220 Darlington Transistor (NPN)1. BASE TO-2202. COLLECTOR 3. EMITTER 3 21FeaturesHigh DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 80 V Dimensions in inches and (millimeters)V
9.19. Size:43K hsmc
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Spec. No. : HE200204HI-SINCERITYIssued Date : 2000.08.01Revised Date : 2004.11.19MICROELECTRONICS CORP.Page No. : 1/4HTIP117PNP EPITAXIAL PLANAR TRANSISTORDescriptionTO-220The HTIP117 is designed for use in general purpose amplifier and low-speedswitching applications. Darlington SchematicCAbsolute Maximum Ratings (TA=25C)B Maximum TemperaturesStorage Temp
9.20. Size:52K hsmc
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Spec. No. : HE200203HI-SINCERITYIssued Date : 2000.08.01Revised Date : 2004.11.19MICROELECTRONICS CORP.Page No. : 1/5HTIP112NPN EPITAXIAL PLANAR TRANSISTORDescriptionTO-220The HTIP112 is designed for use in general purpose amplifier and low-speedswitching applications. Darlington SchematicCAbsolute Maximum Ratings (TA=25C)B Maximum TemperaturesStorage Temp
9.21. Size:814K jilin sino
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DARLINGTON COMPLEMENTARY POWER TRANSISTORS RTIP112/TIP117 APPLICATIONS Engine ignition High frequency switching power supply High frequency power transform power amplifier circuit FEATURES Hi
9.22. Size:274K lzg
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TIP117(3CA117) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power linear switching applications. : TIP112(3DA112) Features: Complement to TIP112(3DA112). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V EBO
9.23. Size:213K inchange semiconductor
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isc Silicon NPN Darlington Power Transistor TIP112DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.5V(Max)@ I = 2ACE(sat) CComplement to Type TIP117Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION
9.24. Size:213K inchange semiconductor
tip117.pdf ![pdf_icon](https://alltransistors.com/ad/pdf_icon.gif)
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isc Silicon PNP Darlington Power Transistor TIP117DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -1AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.5V(Max)@ I = -2ACE(sat) CComplement to Type TIP112Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICA
9.25. Size:212K inchange semiconductor
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isc Silicon PNP Darlington Power Transistor TIP115DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -1AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.5V(Max)@ I = -2ACE(sat) CComplement to Type TIP110Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICAT
9.26. Size:213K inchange semiconductor
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isc Silicon NPN Darlington Power Transistor TIP110DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.5V(Max)@ I = 2ACE(sat) CComplement to Type TIP115Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS
9.27. Size:213K inchange semiconductor
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isc Silicon NPN Darlington Power Transistor TIP111DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.5V(Max)@ I = 2ACE(sat) CComplement to Type TIP116Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS
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