TIP116G Datasheet, Equivalent, Cross Reference Search
Type Designator: TIP116G
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO220
TIP116G Transistor Equivalent Substitute - Cross-Reference Search
TIP116G Datasheet (PDF)
tip110 tip110g tip111 tip111g tip112 tip112g tip115 tip115g tip116 tip116g tip117 tip117g.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
TIP110, TIP111, TIP112(NPN); TIP115, TIP116,TIP117 (PNP)Plastic Medium-PowerComplementary Siliconwww.onsemi.comTransistorsDARLINGTONDesigned for general-purpose amplifier and low-speed switchingapplications. 2 AMPERECOMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain -hFE = 2500 (Typ) @ IC 60-80-100 VOLTS, 50 WATTS= 1.0 Adc Collector-Emitt
tip115 tip116 tip117 to-220.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
MCCTIP115Micro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsTIP116CA 91311Phone: (818) 701-4933TIP117Fax: (818) 701-4939Features High DC Current Gain : hFE=1000 @ VCE=4.0V, IC=1.0A(Min.) Low Collector-Emitter Saturation VoltagePNP Epitaxial Complementary to TIP110/111/112 Lead Free Finish/RoHS Compliant (Note1) ("
tip116.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon PNP Darlington Power Transistor TIP116DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -1AFE CCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.5V(Max)@ I = -2ACE(sat) CComplement to Type TIP111Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICAT
tip110re.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Order this documentMOTOROLAby TIP110/DSEMICONDUCTOR TECHNICAL DATAPlastic Medium-PowerNPNTIP110Complementary Silicon Transistors. . . designed for generalpurpose amplifier and lowspeed switching applications.TIP111* High DC Current Gain hFE = 2500 (Typ) @ IC = 1.0 Adc CollectorEmitter Sustaining Voltage @ 30 mAdcTIP112*VCEO(sus) = 60 Vdc (Min)
tip110 tip112 tip115 tip117.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
TIP110/112TIP115/117COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATIONS 32 LINEAR AND SWITCHING INDUSTRIAL1EQUIPMENT TO-220DESCRIPTION The TIP110 and TIP112 are siliconEpitaxial-Base NPN
tip110 tip112 tip115 tip117 .pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
TIP110/112TIP115/117COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODEAPPLICATIONS LINEAR AND SWITCHING INDUSTRIAL32EQUIPMENT1DESCRIPTIONTO-220The TIP110 and TIP112 are silicon epitaxial-baseNPN transistors in mon
tip110.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
TIP110/112TIP115/117COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORSn SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe TIP110, and TIP112 are siliconepitaxial-base NPN transistors in monolithicDarlington configuration mounted in JedecTO-220 plastic package. They are intented foruse in medium power linear and switchingapplications.32The complementary PNP types are TIP1
tip115.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PNP EPITAXIALTIP115/116/117 SILICON DARLINGTON TRANSISTORHIGH DC CURRENT GAINTO-220MIN h =1000 @ V = -4V, I = -1AFE CE CLOW COLLECTOR-EMITTERSATURATION VOLTAGEMONOLITHIC CONSTRUCTION WITH BUILTIN BASE-EMITTER SHUNT RESISTORSINDUSTRIAL USEComplementary to TIP110/111/112ABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Emitter Voltage :TIP115 VCBO -60
tip110.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NPN EPITAXIALTIP110/111/112 SILICON DARLINGTON TRANSISTORHIGH DC CURRENT GAINTO-220MIN h =1000 @ V =4V, I =1AFE CE CLOW COLLECTOR-EMITTERSATURATION VOLTAGEMONOLITHIC CONSTRUCTION WITH BUILTIN BASE-EMITTER SHUNT RESISTORSINDUSTRIAL USEComplementary to TIP115/116/117ABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Emitter Voltage :TIP110 VCBO 60 V1
tip110 tip111 tip112 to-220.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
MCCMicro Commercial ComponentsTMTIP110/111/11220736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features The complementary PNP types are the TIP115/116/117 respectivelySilicon NPN Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information)Darlington Epoxy
tip112l-tn3.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
UNISONIC TECHNOLOGIES CO., LTD TIP112 NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR DESCRIPTION The UTC TIP112 is designed for such applications as: DC/DC converters supply line switching, battery charger, LCD backlighting,peripheral drivers, Driver in low supply voltage applications (e.g. lamps and LEDs) and inductive load driver (e.g. relays, buzzers and
tip110a.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
UNISONIC TECHNOLOGIES CO., LTD TIP110A Preliminary PNP SILICON TRANSISTOR LOW SATURATION VOLTAGE PNP DARLINGTON TRANSISTOR DESCRIPTION The UTC TIP110A is designed for using in general purpose amplifier and switching applications. FEATURES * Low VCE(SAT) * High Current Gain ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Fre
tip110-117.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPLASTIC POWER TRANSISTORS TIP110 TIP115TIP111 TIP116TIP112 TIP117NPN PNPTO-220Plastic PackageIntended for use in Medium Power Linear and Switching ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL TIP110/115 TIP111/116 TIP112/117 UNITVCEO Collector Emitter Voltage 60
tip112.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SEMICONDUCTOR TIP112TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORMONOLITHIC CONSTRUCTION WITH BUILT IN ABASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.RS FEATURESPD High DC Current Gain. DIM MILLIMETERS: hFE=1000(Min.), VCE=4V, IC=1A.A 10.30 MAXB 15.30 MAX Low Collector-Emitter Saturation Voltage.C 0.80_+ Complementary to TIP117. D 3.60 0.20TE 3.00F
tip117.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SEMICONDUCTOR TIP117TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORMONOLITHIC CONSTRUCTION WITH BUILT IN ABASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.RS FEATURESPD High DC Current Gain. DIM MILLIMETERS: hFE=1000(Min.), VCE=-4V, IC=-1A.A 10.30 MAXB 15.30 MAX Low Collector-Emitter Saturation Voltage.C 0.80_+ Complementary to TIP112. D 3.60 0.20TE 3.00
tip112f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SEMICONDUCTOR TIP112FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORMONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.ACDIM MILLIMETERSS_FEATURES A 10.0 + 0.3_+B 15.0 0.3EHigh DC Current Gain. C _2.70 0.3+D 0.76+0.09/-0.05: hFE=1000(Min.), VCE=4V, IC=1A._E 3.2 0.2+_F 3.0 0.3+Low Collector-Emitter Saturation Volta
tip117f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SEMICONDUCTOR TIP117FTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORMONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.ACDIM MILLIMETERSS_FEATURES A 10.0 + 0.3_+B 15.0 0.3EHigh DC Current Gain. C _2.70 0.3+D 0.76+0.09/-0.05: hFE=1000(Min.), VCE=-4V, IC=-1A._E 3.2 0.2+_F 3.0 0.3+Low Collector-Emitter Saturation Vol
tip112.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
TIP112 TO-220 Darlington Transistor (NPN)TO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 100 V VCE
tip110.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
TIP110 TO-220 Darlington Transistor (NPN)TO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 60 V VCEO Co
tip111.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
TIP111 TO-220 Darlington Transistor (NPN)1. BASE TO-2202. COLLECTOR 3. EMITTER 3 21FeaturesHigh DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 80 V Dimensions in inches and (millimeters)V
htip117.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Spec. No. : HE200204HI-SINCERITYIssued Date : 2000.08.01Revised Date : 2004.11.19MICROELECTRONICS CORP.Page No. : 1/4HTIP117PNP EPITAXIAL PLANAR TRANSISTORDescriptionTO-220The HTIP117 is designed for use in general purpose amplifier and low-speedswitching applications. Darlington SchematicCAbsolute Maximum Ratings (TA=25C)B Maximum TemperaturesStorage Temp
htip112.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Spec. No. : HE200203HI-SINCERITYIssued Date : 2000.08.01Revised Date : 2004.11.19MICROELECTRONICS CORP.Page No. : 1/5HTIP112NPN EPITAXIAL PLANAR TRANSISTORDescriptionTO-220The HTIP112 is designed for use in general purpose amplifier and low-speedswitching applications. Darlington SchematicCAbsolute Maximum Ratings (TA=25C)B Maximum TemperaturesStorage Temp
tip117 3ca117.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
TIP117(3CA117) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power linear switching applications. : TIP112(3DA112) Features: Complement to TIP112(3DA112). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V EBO
tip112.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Darlington Power Transistor TIP112DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.5V(Max)@ I = 2ACE(sat) CComplement to Type TIP117Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION
tip117.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon PNP Darlington Power Transistor TIP117DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -1AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.5V(Max)@ I = -2ACE(sat) CComplement to Type TIP112Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICA
tip115.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon PNP Darlington Power Transistor TIP115DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -1AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.5V(Max)@ I = -2ACE(sat) CComplement to Type TIP110Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICAT
tip110.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Darlington Power Transistor TIP110DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.5V(Max)@ I = 2ACE(sat) CComplement to Type TIP115Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS
tip111.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Darlington Power Transistor TIP111DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.5V(Max)@ I = 2ACE(sat) CComplement to Type TIP116Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .