PBSS5350TH - описание и поиск аналогов

PBSS5350TH 50 V, 3 A PNP low VCEsat (BISS) transistor 21 June 2017 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collect

DISCRETE SEMICONDUCTORS DATA SHEET PBSS5350T 50 V, 3 A PNP low VCEsat (BISS) transistor Product data sheet 2004 Jan 13 Supersedes data of 2002 Aug 08 NXP Semiconductors Product data sheet 50 V, 3 A PBSS5350T PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat and SYMBOL PARAMETER MAX. UNIT corresponding low RCEsa

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

SMD Type Transistors PNP Transistors PBSS5350T (KBSS5350T) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High collector current capability High collector current gain 1 2 Improved efficiency due to reduced heat generation. +0.1 +0.05 0.95-0.1 0.1-0.01 Low collector-emitter saturation voltage VCEsat and +0.1 1.9-0.1 corresponding low RCEsat