PBSS5350TH Datasheet. Specs and Replacement
Type Designator: PBSS5350TH 📄📄
SMD Transistor Code: FJ*
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 35 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SOT23
📄📄 Copy
PBSS5350TH Substitution
- BJT ⓘ Cross-Reference Search
PBSS5350TH datasheet
PBSS5350TH 50 V, 3 A PNP low VCEsat (BISS) transistor 21 June 2017 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collect... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET PBSS5350T 50 V, 3 A PNP low VCEsat (BISS) transistor Product data sheet 2004 Jan 13 Supersedes data of 2002 Aug 08 NXP Semiconductors Product data sheet 50 V, 3 A PBSS5350T PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat and SYMBOL PARAMETER MAX. UNIT corresponding low RCEsa... See More ⇒
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒
SMD Type Transistors PNP Transistors PBSS5350T (KBSS5350T) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High collector current capability High collector current gain 1 2 Improved efficiency due to reduced heat generation. +0.1 +0.05 0.95-0.1 0.1-0.01 Low collector-emitter saturation voltage VCEsat and +0.1 1.9-0.1 corresponding low RCEsat ... See More ⇒
Detailed specifications: PBSS4220PANS, PBSS4260PANS, PBSS4360PAS, PBSS4360X, PBSS5220PAPS, PBSS5250TH, PBSS5255PAPS, PBSS5260PAPS, BD222, PBSS5360PAS, PBSS5360X, PDTA114EQA, PDTA114TMB, PDTA114YQA, PDTA115EMB, PDTA115TMB, PDTA123JQA
Keywords - PBSS5350TH pdf specs
PBSS5350TH cross reference
PBSS5350TH equivalent finder
PBSS5350TH pdf lookup
PBSS5350TH substitution
PBSS5350TH replacement
BJT Parameters and How They Relate
History: 2SC1617 | 2SC1622D7 | 2SC162 | 2SC1622D17
🌐 : EN ES РУ
LIST
Last Update
BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
Popular searches
tip32c datasheet | mje15032g | irf1404 | bc550 | irf9530 | 2n2222a transistor | irfp250 | irf640n datasheet




