PBSS5350TH Datasheet and Replacement

PBSS5350TH50 V, 3 A PNP low VCEsat (BISS) transistor21 June 2017 Product data sheet1. General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package.2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collect

DISCRETE SEMICONDUCTORS DATA SHEETPBSS5350T50 V, 3 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Jan 13Supersedes data of 2002 Aug 08NXP Semiconductors Product data sheet50 V, 3 A PBSS5350TPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat and SYMBOL PARAMETER MAX. UNITcorresponding low RCEsa

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

SMD Type TransistorsPNP TransistorsPBSS5350T (KBSS5350T)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High collector current capability High collector current gain1 2 Improved efficiency due to reduced heat generation.+0.1+0.050.95-0.1 0.1-0.01 Low collector-emitter saturation voltage VCEsat and+0.11.9-0.1 corresponding low RCEsat